Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Anil R. Chourasia"'
Autor:
Miranda Martinez, Anil R. Chourasia
Publikováno v:
Nanomaterials, Vol 12, Iss 2, p 202 (2022)
The Ti/SnO2 interface has been investigated in situ via the technique of x-ray photoelectron spectroscopy. Thin films (in the range from 0.3 to 1.1 nm) of titanium were deposited on SnO2 substrates via the e-beam technique. The deposition was carried
Externí odkaz:
https://doaj.org/article/55e4a55aecda4d719c70da45ef041aaa
Autor:
Miranda, Martinez, Anil R, Chourasia
Publikováno v:
Nanomaterials
The Ti/SnO2 interface has been investigated in situ via the technique of x-ray photoelectron spectroscopy. Thin films (in the range from 0.3 to 1.1 nm) of titanium were deposited on SnO2 substrates via the e-beam technique. The deposition was carried
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1d01135ea141fad57608818d722e6499
https://pubmed.ncbi.nlm.nih.gov/35055221
https://pubmed.ncbi.nlm.nih.gov/35055221
Publikováno v:
Surface and Interface Analysis. 51:246-253
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f58685a722ed1c0284d4dab16ebf327
https://doi.org/10.1002/sia.6576
https://doi.org/10.1002/sia.6576
Autor:
Anil R. Chourasia, Allen E. Hillegas
Publikováno v:
Surface Science Spectra. 28:014003
Thin film of tin (about 15 nm) was deposited on a silicon ⟨100⟩ substrate by the e-beam evaporation technique. The sample was oxidized in an oxygen atmosphere. Both the elemental tin and the oxidized sample were characterized in situ by the techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58236e8efd06807cb855f350042735a7
https://doi.org/10.1116/6.0000528
https://doi.org/10.1116/6.0000528