Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Anil Kumar Gundu"'
Autor:
Anil Kumar Gundu, Volkan Kursun
Publikováno v:
IEEE Transactions on Electron Devices. 69:922-929
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fd6ad9c3afc1dbf20f18d71e23ae13c
https://doi.org/10.1109/ted.2022.3143774
https://doi.org/10.1109/ted.2022.3143774
Autor:
Anil Kumar Gundu, Volkan Kursun
Publikováno v:
2021 IEEE 34th International System-on-Chip Conference (SOCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9f97bf393753ca746ae87ae3cc94a65
https://doi.org/10.1109/socc52499.2021.9739517
https://doi.org/10.1109/socc52499.2021.9739517
Autor:
Volkan Kursun, Anil Kumar Gundu
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:1537-1547
Leakage power consumption of clock distribution networks (CDNs) is an important challenge in modern synchronous integrated circuits with billions of deeply scaled transistors. Multithreshold CMOS technology is commonly used to provide power reduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf848fe47ff496e3ab1ee3c04c69728a
https://doi.org/10.1109/tvlsi.2019.2902215
https://doi.org/10.1109/tvlsi.2019.2902215
Autor:
Anil Kumar Gundu, Volkan Kursun
Publikováno v:
PATMOS
A new low power clock distribution network with multi-threshold-voltage (multi-V t ) repeaters is presented in this paper. A repeater circuit with two inputs and two outputs is employed for suppressing leakage currents in gated clock distribution net
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::635ec2c65834d74b92d328764fbddb55
https://doi.org/10.1109/patmos.2019.8862097
https://doi.org/10.1109/patmos.2019.8862097
Publikováno v:
MWSCAS
The stability of SRAM cells in high density ICs during read cycle is an extremely critical performance metric for data retention. A frame work to identify the tradeoff between Yield and Static Noise Margin (SNM) in the region of high sigma tail end d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5e031b07dffab2d59dc38f2a704b540
https://doi.org/10.1109/mwscas.2016.7869988
https://doi.org/10.1109/mwscas.2016.7869988
Autor:
Shashwat Kaushik, Nidhi Batra, Anuj Grover, G. S. Visweswaran, Anil Kumar Gundu, Mohammad S. Hashmi
Publikováno v:
SoCC
With emerging deep submicron technology, device variations limit the SRAM performance and yield. Cell stability defined by the Static Noise Margin (SNM) of the SRAM cell among other figure of merits (FOMs) governs the yield in SRAMs. Variations in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95b5bcbb09e3ee85154810fc942ea595
https://doi.org/10.1109/socc.2016.7905432
https://doi.org/10.1109/socc.2016.7905432
Publikováno v:
VDAT
A high speed low power modified latch type static sense amplifier design for current sensing in non-volatile memories is presented in this paper. The idea presented in this paper makes use of the fact that the scaling in technology introduces severe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a752be2e64a2ce77bfe80e0801d4fd0
https://doi.org/10.1109/isvdat.2016.8064841
https://doi.org/10.1109/isvdat.2016.8064841
Publikováno v:
VDAT
In advanced technology nodes, device variations limit the SRAM performance and yield. Cell stability defined by the Static Noise Margin (SNM) of the SRAM cell primarily governs the performance with respect to yield in SRAMs. Variations in the scaled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6d90e4bb943ed8a8eb62625aceb3d01
https://doi.org/10.1109/isvdat.2016.8064868
https://doi.org/10.1109/isvdat.2016.8064868
Publikováno v:
VLSI Design
This paper reports a modified latch based Sense Amplifier (SA) and then provides a qualitative statistical comparison of its yield based on offset voltage and sensing delay in 28nm CMOS technology. A thorough comparative statistical analysis with reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55b114b7e8d12e2e9313595b63f15e17
https://doi.org/10.1109/vlsid.2016.38
https://doi.org/10.1109/vlsid.2016.38