Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Anil K. Chinthakindi"'
Publikováno v:
Journal of Electronic Materials. 31:1080-1089
Bimetallic thin films are of interest for use in microelectromechanical systems (MEMS) for the fabrication of sensors and actuators. The coefficient of thermal expansion (CTE) mismatch between the two metal films of the bimetallic structure can be us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::750eac581b091c44d32cfee2b3672ab8
https://doi.org/10.1007/s11664-002-0046-2
https://doi.org/10.1007/s11664-002-0046-2
Autor:
Franz Ungar, T. Goebel, Vidhya Ramachandran, Armin Fischer, Anil K. Chinthakindi, Sun-OO Kim, Douglas D. Coolbaugh, Kyung-Bae Park, Jason Gill, M. Shinosky, Y. Siew, F. Chen, Erdem Kaltalioglu
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
Integration of low-cost and high performance passive capacitors into existing Silicon CMOS technologies is essential for analog and radio frequency (RF) IC applications. Recently, BEOL vertical natural capacitors (VNCAP) with stacked via-comb structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::841b5a74272fc75d429345d495adb787
https://doi.org/10.1109/relphy.2006.251267
https://doi.org/10.1109/relphy.2006.251267
Autor:
Anil K. Chinthakindi, D. Sanderson, K. Stein, Thomas N. Adam, Rajendran Krishnasamy, Gregory G. Freeman, Christopher M. Schnabel, Jae-Sung Rieh, A. Strieker, Shwu-Jen Jeng, F. Pagette, Mounir Meghelli, David C. Ahlgren, Kathryn T. Schonenberg, Marwan H. Khater, J. Johnson, P. Smith
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
This work reports on SiGe HBT technology with f/sub max/ and f/sub T/ of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of f/sub max/ a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1baaa436d630dd52287a9068b64cd15
https://doi.org/10.1109/iedm.2004.1419122
https://doi.org/10.1109/iedm.2004.1419122
Autor:
Basanth Jagannathan, John E. Florkey, J.R. Jones, P. Cottrell, Raminderpal Singh, R. Groves, John J. Pekarik, David R. Greenberg, Douglas D. Coolbaugh, X. Wang, Gregory G. Freeman, Rajendran Krishnasamy, Anil K. Chinthakindi, Matthew J. Breitwisch
Publikováno v:
CICC
The effort to design RF circuits in CMOS is motivated by low cost and significant capacity for on-chip integration. We discuss some of the challenges of implementing RF designs in CMOS, focusing on those introduced by the changing properties of FETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8987fbd019310fd5049395548428326c
https://doi.org/10.1109/cicc.2004.1358782
https://doi.org/10.1109/cicc.2004.1358782
Autor:
Peter Andrew Smith, J. Johnson, Marwan H. Khater, S.-J. Jeng, David R. Greenberg, Basanth Jagannathan, S. Sweeney, F. Pagette, K. Stein, D. Sanderson, Kathryn T. Schonenberg, Andreas D. Stricker, Gregory G. Freeman, Thomas N. Adam, Anil K. Chinthakindi, Rajendran Krishnasamy, Christopher M. Schnabel, Jae-Sung Rieh, Kunal Vaed, John E. Florkey, T. Yanagisawa, David C. Ahlgren
Publikováno v:
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.
Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs, with simultaneously optimized f/sub T/ and f/sub max/ of >300 GHz, are developed. To the author's knowledge, this is t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::264be74986f22495026f8152443768cb
https://doi.org/10.1109/rfic.2004.1320632
https://doi.org/10.1109/rfic.2004.1320632
Autor:
John E. Florkey, T.S.D. Cheung, R. Volant, Christopher M. Schnabel, Kenneth J. Stein, K. Vaed, Z.X. He, J.R. Long, Anil K. Chinthakindi
Publikováno v:
CICC
Differential shielding reduces substrate losses and improves the Q-factor of a monolithic inductor on silicon by up to 35% without process modification or a patterned ground shield. Peak Qs of 32 for 4 /spl mu/m thick aluminum and 28 for 2.3 /spl mu/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::073cf0cd9fb7594312842b4a678c4afd
https://doi.org/10.1109/cicc.2003.1249367
https://doi.org/10.1109/cicc.2003.1249367
Autor:
Marwan H. Khater, David R. Greenberg, S.-J. Jeng, K. Stein, Jae-Sung Rieh, David C. Ahlgren, K. Vaed, John E. Florkey, Peter Andrew Smith, Seshadri Subbanna, H. Chen, David Angell, Anil K. Chinthakindi, Francois Pagette, Andreas D. Stricker, Richard P. Volant, F. Golan, Christopher M. Schnabel, Basanth Jagannathan, Gregory G. Freeman, Kathryn T. Schonenberg
Publikováno v:
Digest. International Electron Devices Meeting.
This work reports on SiGe HBTs with f/sub T/ of 350 GHz. This is the highest reported f/sub T/ for any Si-based transistor as well as any bipolar transistor. Associated f/sub max/ is 170 GHz, and BV/sub CEO/ and BV/sub CBO/ are measured to be 1.4 V a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb5e20cdfd23e4485fb0c398c7834c2
https://doi.org/10.1109/iedm.2002.1175952
https://doi.org/10.1109/iedm.2002.1175952
Autor:
Paul A. Kohl, Anil K. Chinthakindi
Publikováno v:
Journal of The Electrochemical Society. 149:H146
Electrostatic actuators are used as voltage-controlled oscillators or resonators in high frequency applications. The change in deflection of a cantilever beam due to an applied voltage leads to change in capacitance between the plates of the beam. Ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f3579aa9a3814dc86bdcb016f062695
https://doi.org/10.1149/1.1486455
https://doi.org/10.1149/1.1486455
Autor:
Anil K. Chinthakindi, Dhananjay Bhusari, Brian P. Dusch, Jürgen Musolf, Balam A. Willemsen, Eric Prophet, Mark Roberson, Paul A. Kohl
Publikováno v:
Journal of The Electrochemical Society. 149:H139
An electrostatic actuator with an intrinsic stress gradient is provided. The electrostatic actuator comprises an electrode and an electrostatically actuated beam fixed at one end relative to the electrode. The electrostatically actuated beam further
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dfae579a7cd29d3927c124357321585
https://doi.org/10.1149/1.1486454
https://doi.org/10.1149/1.1486454