Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Anil G. Khairnar"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:12503-12508
Investigation of metal organic decomposed rare earth cerium oxide thin films deposited on Si substrate by sol–gel spin coating technique was carried out. The structural properties have been examined by using XRD, Fourier transform infrared spectros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32e1efaada86effb72bf5a04bd87a4fb
https://doi.org/10.1007/s10854-017-7072-6
https://doi.org/10.1007/s10854-017-7072-6
Publikováno v:
Materials Research Bulletin. 87:208-213
The interfacial and electrical properties of HfO2 (5 nm) and Al2O3 (3 nm)/HfO2 (5 nm) high-k deposited on nitride passivated Ge (100) have been investigated. The XPS spectroscopy and HRTEM were used to study the chemical and interfacial properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5b2f63f21c55d873fcb4ef63bedaf67
https://doi.org/10.1016/j.materresbull.2016.11.040
https://doi.org/10.1016/j.materresbull.2016.11.040
Publikováno v:
Materials Science in Semiconductor Processing. 56:277-281
The study of ultrathin ZrO 2 films grown on surface passivated germanium substrates by plasma enhanced Atomic Layer Deposition (PEALD) has been carried out. Nitride passivation has been used to form an interfacial layer between ZrO 2 /Ge. The ultra-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0757fb94950876a0109b3dd280dc5e39
https://doi.org/10.1016/j.mssp.2016.08.025
https://doi.org/10.1016/j.mssp.2016.08.025
Publikováno v:
Applied Surface Science. 364:747-751
Interfacial properties of the ALD deposited HfO2 over the surface nitrided germanium substrate have been studied. The formation of GeON (∼1.7 nm) was confirmed by X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c419c8e62e540a80a611e68515fb5635
https://doi.org/10.1016/j.apsusc.2015.12.218
https://doi.org/10.1016/j.apsusc.2015.12.218
Publikováno v:
Semiconductors. 51:131-133
The study of ZrO2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81150a433355cb685354eb645c2a25a4
https://doi.org/10.1134/s1063782617010092
https://doi.org/10.1134/s1063782617010092
Publikováno v:
Silicon. 8:345-350
Germanium has been reconsidered as a potential substitute channel material for high-performance MOSFETs due to its intrinsic high mobilities for both electrons (3900 cm2 s-1V-1) and holes (1900 cm2 s-1V-1). In the present work we have fabricated Pt/T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::716e5f95288aeb940eb3a346801a2902
https://doi.org/10.1007/s12633-015-9322-7
https://doi.org/10.1007/s12633-015-9322-7
Publikováno v:
Semiconductors. 48:497-500
In the present work, we have grown 2.83 nm thin Al2O3 films directly on pre-cleaned p-Si (100) substrate using precursor Trimethyl Aluminium (TMA) with substrate temperature of 300°C in a Plasma Enhanced Atomic Layer Deposition (PEALD) chamber. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e71b066571d4f63c71303577f63e1f0
https://doi.org/10.1134/s1063782614040204
https://doi.org/10.1134/s1063782614040204
Autor:
Ashok M. Mahajan, Anil G. Khairnar
Publikováno v:
Bulletin of Materials Science. 36:259-263
In this work, cerium oxide thin films were prepared using cerium chloride heptahydrate, ethanol and citric acid as an additive by sol–gel spin-coating technique and further characterized to study the various properties. Chemical composition of depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5abaa8ab7734386fbcaa75a0e6b46923
https://doi.org/10.1007/s12034-013-0458-z
https://doi.org/10.1007/s12034-013-0458-z
Publikováno v:
Solid-State Electronics. 62:44-47
The HfO 2 high-k thin films have been deposited on p-type (1 0 0) silicon wafer using RF magnetron sputtering technique. The XRD, AFM and Ellipsometric characterizations have been performed for crystal structure, surface morphology and thickness meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8483b78bdbbbfd130e5bde34f393f4a
https://doi.org/10.1016/j.sse.2011.04.009
https://doi.org/10.1016/j.sse.2011.04.009
Autor:
A.M. Mahajan, Rahul S. Salunke, Prerna A. Pandit, K.S. Agrawal, Vilas S. Patil, Anil G. Khairnar
Publikováno v:
Физика и техника полупроводников. 51:133
The study of ZrO2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50c533ad1be7b6e552a3fef015dfa32c
https://doi.org/10.21883/ftp.2017.01.44008.8125
https://doi.org/10.21883/ftp.2017.01.44008.8125