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pro vyhledávání: '"Aniket Dhongde"'
Autor:
Kaivan Karami, Aniket Dhongde, Huihua Cheng, Paul M. Reynolds, Bojja Aditya Reddy, Daniel Ritter, Chong Li, Edward Wasige, Stephen Thoms
Publikováno v:
Micro and Nano Engineering, Vol 19, Iss , Pp 100211- (2023)
We demonstrate the fabrication of sub-100 nm T-Gate structures using a single electron beam lithography exposure and a tri-layer resist stack - PMMA/LOR/CSAR. Recent developments in modelling resist development were used to design the process, in whi
Externí odkaz:
https://doaj.org/article/9424c6c05d4d4cf3a1c11b16f2c9bbf6
Publikováno v:
International Journal of Computer Applications. 88:47-50
A low noise amplifier is one of the most commonly used components in analog and digital circuit designs. Low voltage, low power and low noise amplifier design has become an increasingly interesting subject as many applications switch to portable batt