Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Anibal Thiago Bezerra"'
Autor:
Diego Samuel Rodrigues, Guilherme Augusto Soares, Verónica Andréa González-López, Anibal Thiago Bezerra, Mats Jirstrand, José Ricardo de Arruda Miranda
Publikováno v:
Hematology, Transfusion and Cell Therapy, Vol 46, Iss , Pp S27- (2024)
Introduction/Justification: Magnetic nanoparticles (MNPs) have been explored as a new potential theranostic agent, and several studies have devoted significant efforts to employ MNPs in biomedicine, including their applications as imaging contrast ag
Externí odkaz:
https://doaj.org/article/cf72e896efad41018673df76a779ef58
Autor:
Anibal Thiago Bezerra, Leonardo Antonio Pinto, Diego Samuel Rodrigues, Gabriela Nogueira Bittencourt, Paulo Fernando de Arruda Mancera, José Ricardo de Arruda Miranda
Publikováno v:
Mathematical Biosciences and Engineering, Vol 18, Iss 6, Pp 9511-9524 (2021)
Classical quantification of gastric emptying (GE) and orocaecal transit (OCT) based on half-life time T50, mean gastric emptying time (MGET), orocaecal transit time (OCTT) or mean caecum arrival time (MCAT) can lead to misconceptions when analyzing i
Externí odkaz:
https://doaj.org/article/9d6b1d25281b4d0c9564aee302b36694
Autor:
Anibal Thiago Bezerra
Publikováno v:
Journal of Computational Electronics. 19:1645-1650
A different approach to the calculation of the dark current of quantum-well infrared photodetectors (QWIPs) based on a modified version of Levine’s method is presented. A quantum-well-dependent transmission probability is proposed and evaluated. Th
With the advent of near-term quantum computers, it is now possible to simulate solid-state properties using quantum algorithms. By an adequate description of the system's Hamiltonian, variational methods enable to fetch of the band structure and othe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd29651205e8770833e4acb143bcda36
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 146:115513
Autor:
Leonardo Antonio Pinto, José Ricardo de Arruda Miranda, Diego Samuel Rodrigues, Gabriela Nogueira Bittencourt, Anibal Thiago Bezerra, Paulo Fernando de Arruda Mancera
Publikováno v:
Scopus
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Mathematical Biosciences and Engineering, Vol 18, Iss 6, Pp 9511-9524 (2021)
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Mathematical Biosciences and Engineering, Vol 18, Iss 6, Pp 9511-9524 (2021)
Made available in DSpace on 2022-04-28T19:46:54Z (GMT). No. of bitstreams: 0 Previous issue date: 2021-01-01 Classical quantification of gastric emptying (GE) and orocaecal transit (OCT) based on half-life time T50, mean gastric emptying time (MGET),
Gold and silver alloys enable novel opportunities for engineering materials with distinct optical responses. Here we investigate the optical properties of gold and silver (Ag x Au 1−x) structures using First-Principle Density Functional Theory (DFT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f950a720e85cbf98ee2dc2a1363f2ea8
https://doi.org/10.21203/rs.3.rs-711773/v1
https://doi.org/10.21203/rs.3.rs-711773/v1
Autor:
Nelson Studart, Anibal Thiago Bezerra
Publikováno v:
Journal of Physics D: Applied Physics. 50:305501
A semiconductor structure consisting of two coupled quantum wells embedded into the intrinsic region of a p–i–n junction is proposed as an intermediate band solar cell with a photon ratchet state, which would lead to increasing the cell efficienc
Autor:
Nelson Studart, Pedro Henrique Pereira, Anibal Thiago Bezerra, Paulo F. Farinas, Marcelo Z. Maialle, Marcos H. Degani
Publikováno v:
Journal of Physics D: Applied Physics. 50:135105
Autor:
R. M. S. Kawabata, Mauricio P. Pires, Anibal Thiago Bezerra, B. P. Figueroa, A. D. B. Maia, Patricia L. Souza
Publikováno v:
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro).
Dark current noise in InGaAs/InAlAs quantum well infrared photodetectors has been investigated as a function of temperature and bias voltage. From the current noise dependence on these parameters the noise gain has been determined.