Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Angelo Giuseppe Sciacca"'
Autor:
Giuseppe Pennisi, Mario Pulvirenti, Luciano Salvo, Angelo Giuseppe Sciacca, Salvatore Cascino, Antonio Laudani, Nunzio Salerno, Santi Agatino Rizzo
Publikováno v:
Energies, Vol 17, Iss 11, p 2651 (2024)
This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions. The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in ord
Externí odkaz:
https://doaj.org/article/0471e2c7a0b5488daa07e51a56d6b3ec
Autor:
Arjun Sujeeth, Angelo Di Cataldo, Luigi Danilo Tornello, Mario Pulvirenti, Luciano Salvo, Angelo Giuseppe Sciacca, Giacomo Scelba, Mario Cacciato
Publikováno v:
Energies, Vol 17, Iss 3, p 595 (2024)
The main aim of this work is to present a step-by-step procedure to model and analyze the power loss distribution of three-level Gallium Nitride (GaN) inverters. It has been applied to three distinct three-phase three-level voltage source inverters u
Externí odkaz:
https://doaj.org/article/d237120689fa43fcb78b39f7f7a0d80d
The aim of this paper is to suitably exploit the measurements of gate-source voltages to extract useful information relative to the crosstalk phenomena that can occur in SiC MOSFETs half-bridge converters. In particular, this work underlines how the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76a5f760d3fc9827c3e62db3ea87a175
http://hdl.handle.net/20.500.11769/526287
http://hdl.handle.net/20.500.11769/526287
Autor:
Massimo Nania, Mario Pulvirenti, Luciano Salvo, Giuseppe Scarcella, Giacomo Scelba, Angelo Giuseppe Sciacca
Publikováno v:
2020 IEEE Energy Conversion Congress and Exposition (ECCE).
The aim of this paper is to evaluate the impact of SiC MOSFET body diode reverse recovery on device switching speed limits. Half-bridge converter leg, composed of 1200V, 130A SiC MOSFETs in HIP 247-4L package, has been analyzed in this study and expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff6dedf16a103bb92a8ed7c7d56cfcea
https://doi.org/10.1109/ecce44975.2020.9236330
https://doi.org/10.1109/ecce44975.2020.9236330
Publikováno v:
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).
The aim of this paper is to provide an accurate analytical modeling of a Silicon Carbide MOSFETs-based half bridge converter including all the major contributions due to parasitic elements of device package and PCB layout. The turn on and off switchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab31242f0eb2bae26c18ed6726ef4974
https://doi.org/10.23919/epe20ecceeurope43536.2020.9215618
https://doi.org/10.23919/epe20ecceeurope43536.2020.9215618
Publikováno v:
2020 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM).
The main aim of this work is to evaluate the robustness to short circuits of SiC MOSFETs featuring different commercially available packages. During these tests, the dice of the power devices are subjected to significant temperature gradients because
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c83d0b3508a166343840d35be0a6dba
https://doi.org/10.1109/speedam48782.2020.9161861
https://doi.org/10.1109/speedam48782.2020.9161861
Autor:
Giacomo Scelba, Massimo Nania, Giuseppe Scarcella, Angelo Giuseppe Sciacca, Mario Cacciato, Luciano Salvo, Mario Pulvirenti
Publikováno v:
2019 IEEE Energy Conversion Congress and Exposition (ECCE).
The main aim of this paper is to provide an analytical model of the turn on transient behaviour of Silicon Carbide (SiC) MOSFETs used in a half bridge converter topology. The model includes the high frequency parasitic elements of PCB board, bus-bar,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fcb71051b88adebfebf1392354218316
https://doi.org/10.1109/ecce.2019.8912215
https://doi.org/10.1109/ecce.2019.8912215
Publikováno v:
Energies
Volume 12
Issue 4
Energies, Vol 12, Iss 4, p 589 (2019)
Volume 12
Issue 4
Energies, Vol 12, Iss 4, p 589 (2019)
The development and the validation of an averaged-value mathematical model of an asymmetrical hybrid multi-level rectifier is presented in this work. Such a rectifier is composed of a three-level T-type unidirectional rectifier and of a two-level inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22dcc49c569e3dce04abdec0e0c761cf
http://hdl.handle.net/11570/3138866
http://hdl.handle.net/11570/3138866