Výsledky vyhledávání - "Angelina Vogt"

Recombination dynamics in planar and three-dimensional InGaN/GaN light emitting diode structures

Autor: Hao Zhou, Matin Sadat Mohajerani, Martin Strassburg, Barbara Szafranski, Adrian Stefan Avramescu, Tobias Voss, Jana Hartmann, Hergo-Heinrich Wehmann, Tilman Schimpke, Angelina Vogt, Andreas Waag, Sönke Fündling

Publikováno v: Journal of Materials Research. 32:2456-2463

The spectrally and temporally resolved luminescence of three-dimensional (3D) InGaN/GaN microrods and planar light emitting diode (LED) structures is studied for different energy densities of fs-laser excitation pulses and for different sample temper

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c707eec60ced33635298f14eb0ce5346
https://doi.org/10.1557/jmr.2017.212

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Enhancement of the sub-band-gap photoconductivity in ZnO nanowires through surface functionalization with carbon nanodots

Autor: Siegfried R. Waldvogel, Nicolai Markiewcz, Kseniia Zimmermann, Davide Cammi, Frank Dissinger, Tobias Voss, Alaaeldin Gad, Joan Daniel Prades, René Gorny, Carsten Ronning, Angelina Vogt, Andreas Waag

Publikováno v: Dipòsit Digital de la UB
Universidad de Barcelona
Recercat. Dipósit de la Recerca de Catalunya
instname

We report on the surface functionalization of ZnO nanowire (NW) arrays by attachment of carbon nanodots (C-dots) stabilized by polyethylenimine. The photoconductive properties of the ZnO NWs/C-dots devices were investigated under photoexcitation with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f3bfad7d04c7d7e22d920f730867526
http://hdl.handle.net/2445/119416

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Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption

Autor: Cleber Renato Mendonça, Tobias Voss, Christoph Margenfeld, J. P. Siqueira, I. Manglano Clavero, Renato J. Martins, Sönke Fündling, Andreas Waag, Angelina Vogt

Publikováno v: Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP

We studied the near-band-edge emission (NBE) and yellow defect luminescence (YL) of GaN under below bandgap excitation with 40-fs laser pulses at a wavelength of 775 nm. Even though in this case three-photon absorption processes are required for the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::453e5c05c1b3dafdb2c5c82306ad6a00
https://doi.org/10.1063/1.5027395

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