Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Angeliki Tataridou"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 611-619 (2022)
This work presents a new method for the Verilog-A implementation of Lorentzian noise models, in a module called VERILOR, which can automatically generate either Lorentzian or 1/f-like noise spectra depending on the trap density and gate oxide area, f
Externí odkaz:
https://doaj.org/article/b17819f744494194984feb209413215b
Publikováno v:
2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d8703d1f52a225bfa3f49dfe70f676b
https://doi.org/10.1109/mocast54814.2022.9837755
https://doi.org/10.1109/mocast54814.2022.9837755
Publikováno v:
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e1bc9fbafd8f02b57bef30247c63acd
https://doi.org/10.1109/essderc53440.2021.9631802
https://doi.org/10.1109/essderc53440.2021.9631802
Publikováno v:
2021 IEEE International Reliability Physics Symposium (IRPS)
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405102⟩
IRPS
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405102⟩
IRPS
This work presents a new method, called “pinch to detect”, for the characterization of Random Telegraph Noise (RTN) in nanometer length Tri-Gate Nanowire MOSFETs, allowing for the maximum number of active RTN traps to be detected. We demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::becc00b8554f48e2889b9aa902c09a21
https://hal.archives-ouvertes.fr/hal-03260919/document
https://hal.archives-ouvertes.fr/hal-03260919/document
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (11), pp.4568-4572. ⟨10.1109/TED.2020.3026612⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (11), pp.4568-4572. ⟨10.1109/TED.2020.3026612⟩
This article presents a new methodology for the extraction of low-frequency noise (LFN) or random telegraph noise (RTN) parameters, such as the gate oxide interface trap density, ${N}_{\text {t}}$ , and the mobility fluctuations factor, $\Omega $ , w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22f2d3aad6cda33f7b06042f294c73d8
https://hal.archives-ouvertes.fr/hal-03260917/file/Tataridou_TED_2020.pdf
https://hal.archives-ouvertes.fr/hal-03260917/file/Tataridou_TED_2020.pdf
Publikováno v:
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), May 2020, Edinburgh, United Kingdom. pp.1-4, ⟨10.1109/ICMTS48187.2020.9107908⟩
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), May 2020, Edinburgh, United Kingdom. pp.1-4, ⟨10.1109/ICMTS48187.2020.9107908⟩
International audience; In this paper we demonstrate for the first time how the series resistance of an advanced CMOS device, such as the FinFET, can lead to an incorrect extraction of low-frequency noise parameters. In particular, the use of the car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4217194dcd031282dd361f4b1c38d6b
https://doi.org/10.1109/icmts48187.2020.9107908
https://doi.org/10.1109/icmts48187.2020.9107908