Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Angelika Geiselbrechtinger"'
Autor:
Dietmar Kissinger, Farabi Ibne Jamal, Jan Wessel, Vincent Lammert, Vadim Issakov, Angelika Geiselbrechtinger, C. Heine
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 66:1628-1632
In this brief, an integrated K-band complex permittivity sensor for characterization of biomaterials is presented. The circuit enables determining both real and imaginary part of the permittivity of a material under test exposed to the sensor. We pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49b9a196fc87ed2ef99fd47ebd445125
https://doi.org/10.1109/tcsii.2019.2921199
https://doi.org/10.1109/tcsii.2019.2921199
Publikováno v:
BCICTS
This paper presents a low-power, highly-integrated D-Band transceiver chip realized in a 0.13 µm SiGe BiCMOS technology. The integration level includes three receiver (RX) channels, one transmitter (TX) channel, local oscillator (LO) signal generati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a20e5c41c3d721e194b2795ad55df27
https://doi.org/10.1109/bcicts45179.2019.8972781
https://doi.org/10.1109/bcicts45179.2019.8972781
Publikováno v:
2019 92nd ARFTG Microwave Measurement Conference (ARFTG).
The unity current gain frequency $(f_{T})$ and the maximum oscillation frequency $(f_{max})$ are key parameters used to characterize the highest achievable speed of a semiconductor technology. However, these values are usually evaluated based on tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93cb86887a8a7183369c7964d2d0812c
https://doi.org/10.1109/arftg.2019.8637249
https://doi.org/10.1109/arftg.2019.8637249
Publikováno v:
2018 Asia-Pacific Microwave Conference (APMC).
This paper presents a single-stage stacked Class AB power amplifier (PA) with lower complexity for fifth-generation (5G) K/K a band front-ends that has been realized in a 45 nm PD-SOI CMOS technology. Measurement results show that the power amplifier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7c653d2d95ac79e8d42e3331600f8f3
https://doi.org/10.23919/apmc.2018.8617378
https://doi.org/10.23919/apmc.2018.8617378
Autor:
Sebastian Kehl-Waas, Vadim Issakov, Radu Ciocoveanu, Angelika Geiselbrechtinger, Werner Simburger
Publikováno v:
BCICTS
This paper presents a low-power, ESD-protected 24 GHz single-ended input to differential output single-stage cascode LNA in Infineon's SiGe BiCMOS technology. The proposed circuit uses bridged T-coils as loads to provide an inductive voltage divider
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1c50837815e81b056ebac4b3b6a1ea6
https://doi.org/10.1109/bcicts.2018.8550914
https://doi.org/10.1109/bcicts.2018.8550914
Publikováno v:
2018 48th European Microwave Conference (EuMC).
We present a continuously tunable 52-to-61 GHz push-push cross-coupled voltage-controlled oscillator (VCO) in a 28 nm bulk CMOS technology. The second harmonic is extracted in a non-invasive way using a transformer. The primary side acts simultaneous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d253f1c47af4fd586edd6232e03876cb
https://doi.org/10.23919/eumc.2018.8541550
https://doi.org/10.23919/eumc.2018.8541550
Autor:
J. Rimmelspacher, A. Werthof, Angelika Geiselbrechtinger, Sascha Breun, Robert Weigel, Vadim Issakov
Publikováno v:
2018 48th European Microwave Conference (EuMC).
This paper presents a systematic comparison of integrated transformer structures realized in a 28 nm bulk CMOS technology and characterized up to the millimetre-wave frequencies. First, the rectangular versus octagonal coil shapes are compared. Next,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b09cd4ba6ce8ef156281776396b01d4
https://doi.org/10.23919/eumc.2018.8541548
https://doi.org/10.23919/eumc.2018.8541548
Publikováno v:
2018 91st ARFTG Microwave Measurement Conference (ARFTG).
Amount of inductors and transformers in highly integrated mm-wave multi-channel data communication and radar transceivers is steadily increasing with the growing complexity of the chips. Driven on one hand by higher integration of phased-array transc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb738766e6a386925da8d3eab9ca3728
https://doi.org/10.1109/arftg.2018.8423809
https://doi.org/10.1109/arftg.2018.8423809
Publikováno v:
International Journal of Microwave Science and Technology.
A novel technological method to improve the quality factor (Q) of RF-integrated inductors for wireless applications is presented in this paper. A serious reduction of substrate losses caused by capacitive coupling is provided. This is realised by rem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a84c0aef83dd3afad552f5bfa14fc624
Publikováno v:
Semiconductor Science and Technology. 24:075007
The necessity for exact modelling and simulation data of the electrical characteristics of passive on-chip devices has become more and more important. The electrical performance of RF circuits is predominantly restricted by the passives. In this work
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45ffbf0896cc20aa423365021aace0f4
https://doi.org/10.1088/0268-1242/24/7/075007
https://doi.org/10.1088/0268-1242/24/7/075007