Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Angelika Bruns"'
Autor:
Angelika Bruns, Peter Benner
Publikováno v:
Mathematical and Computer Modelling of Dynamical Systems. 21:103-129
The Bilinear Interpolatory Rational Krylov Algorithm (BIRKA; P. Benner and T. Breiten, Interpolation-based H2-model reduction of bilinear control systems, SIAM J. Matrix Anal. Appl. 33 (2012), pp. 859–885. doi:10.1137/110836742) is a recently devel
Autor:
Angelika Bruns, Pavel Čepek
Publikováno v:
Neues Jahrbuch für Geologie und Paläontologie - Monatshefte. 2001:733-743
Publikováno v:
Microelectronic Engineering. 11:255-258
A RIE technique for the fabrication of sub-0.5 μm W absorber patterns has been developed based on a SF 6 /CH 3 /Ar gas system. Upon extensive optimization of particularly CHF 3 content and bias voltage precise pattern with vertical profiles can be e
Publikováno v:
Microelectronic Engineering. 6:259-264
This paper reports on a novel absorber technology for X-ray stepper masks based on a stabilized tungsten layer. Effective stress reduction (σ⩽10 7 N/m 2 ) and excellent long term stability (Δσ 6 N/m 2 ) are being obtained by sputtering the 0.8
Publikováno v:
Microelectronic Engineering. 6:467-471
Negative working X-ray resists, based on phenolic resin, an acid generator and a crosslinker are described. First the sensitivities of various activators are compared by using a proton scavenger, that produces a colour upon protonation. Although diph
This paper deals with the investigation of novel beam line windows based on magnesium in combination with silicon X-ray masks. Mg enables, because of the distinct absorption edge at 10A, an effective contrast enhancement in synchrotron lithography. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d00b4a450a0d49b83d147e1361b6d5b
https://publica.fraunhofer.de/handle/publica/259948
https://publica.fraunhofer.de/handle/publica/259948
Publikováno v:
SPIE Proceedings.
This paper deals with the development of an X-ray stepper mask technology based on a rigid SiC.-membrane and a stress compensated W-absorber system. The SiC-mask blanks are being fabricated using batch processes like CVD-deposition and selective thin