Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Angelica Azcatl"'
Publikováno v:
APL Materials, Vol 5, Iss 8, Pp 086108-086108-6 (2017)
In this work, the atomic layer deposition process using ozone and trimethylaluminum (TMA) for the deposition of Al2O3 films on WSe2 was investigated. It was found that the ozone-based atomic layer deposition enhanced the nucleation of Al2O3 in compar
Externí odkaz:
https://doaj.org/article/afd93987991e45288826e74e2797a851
Autor:
Huai-Hsun Lien, Margaret Dobrowolska, Xinyu Liu, John Weisenberger, Debdeep Jena, Suresh Vishwanath, Arthur R. Woll, Aditya Sundar, Stephen McDonnell, Sergei Rouvimov, Robert M. Wallace, Ning Lu, Angelica Azcatl, Xin Peng, Jacek K. Furdyna, Kyle Shen, Edward Lochocki, Moon J. Kim, Wan Sik Hwang, Huili Grace Xing
Publikováno v:
Journal of Crystal Growth. 482:61-69
MoTe2 is the least explored material in the Molybdenum-chalcogen family. Molecular beam epitaxy (MBE) provides a unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynami
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::543ece707e2cd7f5788c2f435146e01c
https://doi.org/10.1016/j.jcrysgro.2017.10.024
https://doi.org/10.1016/j.jcrysgro.2017.10.024
Autor:
Weichao Wang, Christopher L. Hinkle, Xiaoye Qin, Rafik Addou, Angelica Azcatl, Cheng Gong, Hong Dong, Robert M. Wallace, Wei-Hua Wang, Stephen McDonnell
Publikováno v:
ACS Applied Materials & Interfaces. 9:38977-38983
MoS2, as a model transition metal dichalcogenide, is viewed as a potential channel material in future nanoelectronic and optoelectronic devices. Minimizing the contact resistance of the metal/MoS2 junction is critical to realizing the potential of Mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5504a49699ba03bc5626d1bafc32dcf4
https://doi.org/10.1021/acsami.7b10974
https://doi.org/10.1021/acsami.7b10974
Autor:
Robert M. Wallace, Chadwin D. Young, Pavel Bolshakov, Angelica Azcatl, Peng Zhao, Paul K. Hurley
Publikováno v:
Microelectronic Engineering. 178:190-193
High quality HfO2 and Al2O3 substrates are fabricated in order to study their impact on top-gate MoS2 transistors. Compared with top-gate MoS2 FETs on a SiO2 substrate, the field effect mobility decreased for devices on HfO2 substrates but substantia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0578dab9c9d142c4e364e08d32a0429
https://doi.org/10.1016/j.mee.2017.04.045
https://doi.org/10.1016/j.mee.2017.04.045
Autor:
Nicholas E. Grant, Pheng Phang, Robert M. Wallace, Daisuke Kiriya, Teng Kho, Andres Cuevas, Manuel Quevedo-Lopez, Daniel Macdonald, Di Yan, Ali Javey, James Bullock, Angelica Azcatl, Hang Cheong Sio, Mark Hettick
Publikováno v:
ACS Applied Materials & Interfaces. 8:24205-24211
The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a922093dad0b91fa512b0bddbc3c54a
https://doi.org/10.1021/acsami.6b07822
https://doi.org/10.1021/acsami.6b07822
Autor:
Angelica Azcatl, Peng Zhao, Pavel Bolshakov-Barrett, Robert M. Wallace, Chadwin D. Young, Y. Y. Gomeniuk, Paul K. Hurley, Michael Schmidt, Christopher L. Hinkle
Publikováno v:
ECS Transactions. 75:153-162
Currently, transition metal dichalcogenides (TMDs) are under intense investigation due to their potential uses. [1] One reason for the interest is because TMDs exhibit a bandgap. This provides a key aspect that can enable their use in future transist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11e2f7b213bf992f1ab2c9685290218f
https://doi.org/10.1149/07505.0153ecst
https://doi.org/10.1149/07505.0153ecst
Autor:
Qingxiao Wang, Xiaoye Qin, Joerg Appenzeller, Christopher L. Hinkle, Robert M. Wallace, Ning Lu, Rafik Addou, Moon J. Kim, Angelica Azcatl, Abhijith Prakash, Kyeongjae Cho, Jiyoung Kim, Lanxia Cheng, Chenxi Zhang
Publikováno v:
Nano Letters. 16:5437-5443
Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homojunctions. Herein, we propose an effective strategy for doping of MoS2 with nitrogen through a remote N2 plasma surface treatm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::daa0c2a9b720671fd7eedd80e0883c01
https://doi.org/10.1021/acs.nanolett.6b01853
https://doi.org/10.1021/acs.nanolett.6b01853
Publikováno v:
ACS Applied Materials & Interfaces. 8:19119-19126
Exfoliated molybdenum disulfide (MoS2) is shown to chemically oxidize in a layered manner upon exposure to a remote O2 plasma. X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and atomic force microscopy (AFM) are emplo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::121a6710c3d4c9153b876122c0def2ec
https://doi.org/10.1021/acsami.6b04719
https://doi.org/10.1021/acsami.6b04719
Autor:
Jiyoung Kim, Greg Mordi, Angelica Azcatl, Rafik Addou, Robert M. Wallace, Luigi Colombo, Jie Huang, Srikar Jandhyala, Antonio T. Lucero, Lanxia Cheng
Publikováno v:
ACS Applied Materials & Interfaces. 8:5002-5008
Despite the number of existing studies that showcase the promising application of fluorinated graphene in nanoelectronics, the impact of the fluorine bonding nature on the relevant electrical behaviors of graphene devices, especially at low fluorine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77ef342e3993067b2f80bc58d5f565b7
https://doi.org/10.1021/acsami.5b11701
https://doi.org/10.1021/acsami.5b11701
Autor:
Xinyu Liu, Suresh Vishwanath, Debdeep Jena, Huili Grace Xing, Jacek K. Furdyna, Moon J. Kim, Katrina Magno, Juan Carlos Idrobo, Sergei Rouvimov, Robert M. Wallace, Angelica Azcatl, Ning Lu, Leonardo Basile
Publikováno v:
Journal of Materials Research. 31:900-910
Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96dce7aa86c88dbe81e23f1db3679a8d
https://doi.org/10.1557/jmr.2015.374
https://doi.org/10.1557/jmr.2015.374