Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Angeletos, T."'
Autor:
Potsidi, M.S., Kuganathan, N., Chroneos, A., Christopoulos, S.-R.G., Angeletos, T., Sarlis, N.V., Londos, C.A.
Publikováno v:
In Materials Science in Semiconductor Processing 1 June 2021 127
Publikováno v:
In Materials Science in Semiconductor Processing 1 March 2018 75:283-287
Autor:
Potsidi, M. S.1 (AUTHOR) mpotsidi@phys.uoa.gr, Angeletos, T.1 (AUTHOR) angelet@phys.uoa.gr, Londos, C. A.1 (AUTHOR) hlontos@phys.uoa.gr
Publikováno v:
Journal of Materials Science. Mar2022, Vol. 57 Issue 9, p5507-5517. 11p. 4 Graphs.
This work reports theoretical and experimental studies of the substitutional carbon-dioxygen (CsO2i) defect in silicon (Si). To this end, density functional theory (DFT) calculations were used to predict the lowest energy structure of the defect. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::c07d3363df3eb700d024e1c9e92bca46
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3034945
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3034945
We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (Ci) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of Ci(SiI) defects a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::8ea1426387fea34fc9dca109c41ec518
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3035313
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3035313
We investigated, experimentally as well as theoretically, defect structures in electron irradiated Czochralski-grown silicon (Cz-Si) containing carbon. Infrared spectroscopy (IR) studies observed a band at 1020 cm−1 arisen in the spectra around 300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::2647d45ec1d3d4daee644910b1992c9a
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:2980938
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:2980938
Publikováno v:
Journal of Applied Physics; 3/28/2016, Vol. 119 Issue 12, p125704-1-125704-8, 8p, 1 Diagram, 10 Graphs
Autor:
Angeletos, T., Sgourou, E. N., Andrianakis, A., Diamantopoulou, A., Chroneos, A., Londos, C. A.
Publikováno v:
Journal of Applied Physics; 2015, Vol. 118 Issue 1, p1-8, 8p, 2 Charts, 13 Graphs
We investigate neutron irradiation-induced defects in p-type Czochralski silicon (Cz–Si) subjected initially to heat treatments under high hydrostatic pressure (HTHP), by means of infrared spectroscopy (IR). A pair of bands at 592 and 883 cm−1 ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::c4106bcf4321564a56d76e57af0df456
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3035368
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3035368
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