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pro vyhledávání: '"Angada Sachid"'
Autor:
Kevin Chen, Daisuke Kiriya, Mark Hettick, Mahmut Tosun, Tae-Jun Ha, Surabhi Rao Madhvapathy, Sujay Desai, Angada Sachid, Ali Javey
Publikováno v:
APL Materials, Vol 2, Iss 9, Pp 092504-092504-7 (2014)
Stable n-doping of WSe2 using thin films of SiNx deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiNx act to dope WSe2 thin flakes n-type via field-induced effect. The electron
Externí odkaz:
https://doaj.org/article/c192f684c98a4db2baa99b0f9ffbd89f
