Zobrazeno 1 - 10
of 503
pro vyhledávání: '"Ang, Yee Sin"'
Autor:
Tho, Che Chen, Ang, Yee Sin
Band alignment of metal contacts to 2D semiconductors often deviate from the ideal Shottky-Mott (SM) rule due to the non-ideal factors such as the formation of interface dipole and metal-induced gap states (MIGS). Although MIGS can be strongly suppre
Externí odkaz:
http://arxiv.org/abs/2411.02996
Autor:
Mukherjee, Subhrajit, Wang, Shuhua, Venkatakrishnarao, Dasari, Tarn, Yaoju, Talha-Dean, Teymour, Lee, Rainer, Verzhbitskiy, Ivan A., Huang, Ding, Mishra, Abhishek, John, John Wellington, Das, Sarthak, Bussoloti, Fabio, Maddumapatabandi, Thathsara D., Teh, Yee Wen, Ang, Yee Sin, Goh, Kuan Eng Johnson, Lau, Chit Siong
Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental performance still l
Externí odkaz:
http://arxiv.org/abs/2409.08453
Autor:
Xu, Linqiang, Hu, Yue, Xu, Lianqiang, Xu, Lin, Li, Qiuhui, Wang, Aili, Lau, Chit Siong, Lu, Jing, Ang, Yee Sin
Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against short-channel effects, high air stability, and potential for low-energy de
Externí odkaz:
http://arxiv.org/abs/2409.08096
Autor:
Peng, Rui, Yang, Jin, Hu, Lin, Ong, Wee-Liat, Ho, Pin, Lau, Chit Siong, Liu, Junwei, Ang, Yee Sin
Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of spin-polarized current
Externí odkaz:
http://arxiv.org/abs/2408.12504
Autor:
Xu, Linqiang, Zhao, Liya, Lau, Chit Siong, Zhang, Pan, Xu, Lianqiang, Li, Qiuhui, Fang, Shibo, Ang, Yee Sin, Sun, Xiaotian, Lu, Jing
Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact resistance, and low leakage current. However, the absence of ultra-sh
Externí odkaz:
http://arxiv.org/abs/2408.07339
Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications
Autor:
Xu, Linqiang, Liu, Shiqi, Li, Qiuhui, Li, Ying, Fang, Shibo, Guo, Ying, Ang, Yee Sin, Yang, Chen, Lu, Jing
Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1) s^(-1)), and excellent device performance (current on-off ratio of 10^
Externí odkaz:
http://arxiv.org/abs/2408.07338
The Kane-Mele model has been modified to achieve versatile topological phases. Previous work [Phys. Rev. Lett. 120, 156402 (2018)] introduced a staggered intrinsic spin-orbit coupling effect to generate pseudohelical edge states, with Rashba spin-orb
Externí odkaz:
http://arxiv.org/abs/2408.04328
Autor:
Lee, Kok Wai, Calderon, Mateo Jalen Andrew, Yu, Xiang-Long, Lee, Ching Hua, Ang, Yee Sin, Fu, Pei-Hao
Floquet engineering of topological phase transitions driven by a high-frequency time-periodic field is a promising approach to realizing new topological phases of matter distinct from static states. Here, we theoretically investigate Floquet engineer
Externí odkaz:
http://arxiv.org/abs/2408.02093
Using first-principles simulations combined with many-body calculations, we show that two-dimensional free-standing quintuple-layer Bi2Se2Te is an inversion symmetric monolayer expected to achieve spatially indirect exciton with large exciton radius,
Externí odkaz:
http://arxiv.org/abs/2407.12262
Non-reciprocal devices are key components in modern electronics covering broad applications ranging from transistors to logic circuits thanks to the output rectified signal in the direction parallel to the input. In this work, we propose a transverse
Externí odkaz:
http://arxiv.org/abs/2405.04751