Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Ang, Ghim Boon"'
Autor:
Angela Teo, Ng Hui Peng, N. Dayanand, Tam Yong Seng, J.C. Lam, Mai Zhi Hong, Xu Nai Yun, Chen Chang Qing, Ang Ghim Boon
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In wafer fabrication, it is important for analyst to be equipped with the mindset of deep dive towards uncovering the underlying “hidden and real” defect even after finding some anomaly that appears to be the root cause. This is critical as inexp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5c72a54c30bfc1da8db6c2749a3dba8
https://doi.org/10.1109/ipfa.2017.8060215
https://doi.org/10.1109/ipfa.2017.8060215
Autor:
Alfred Quah, Teo Angela, Zhihong Mai, Tam Yong Seng, Ang Ghim Boon, C. Q. Chen, Ng Hui Peng, Jeffrey Lam, Yip Kim Hong
Publikováno v:
International Symposium for Testing and Failure Analysis.
With the rapid development of semiconductor manufacturing technologies, IC devices evolve to smaller feature sizes and higher densities, and thus the task of performing successful failure analysis (FA) is becoming increasingly difficult. Device minia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb8571cf218c72e6bfe8081aa734a585
https://doi.org/10.31399/asm.cp.istfa2014p0250
https://doi.org/10.31399/asm.cp.istfa2014p0250
Autor:
Binghai Liu, Kunihiko Takahashi, Chivukula Subbu, C. Q. Chen, Ang Ghim Boon, Jeffrey Lam, Si Ping Zhao, Eddie Er
Publikováno v:
Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f03de992a4955e0cfb5fd1a2b236686
https://doi.org/10.1109/ipfa.2014.6898200
https://doi.org/10.1109/ipfa.2014.6898200
Autor:
Loh Sock Khim, Ang Ghim Boon, Ng Hui Peng, Zhao Si Ping, Neo Soh Ping, Chen Changqing, Ng Peng Tiong, Yip Kim Hong, Angela Teo
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this paper, a low yield case with a specific failing pattern in the wafers and related to a systematic front-end defect in DNWELL from a specific location and structure in the device was discussed. This paper also illustrates and put emphasis on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2ccdc40c621adbba6375bcd4b188d38
https://doi.org/10.1109/ipfa.2013.6599149
https://doi.org/10.1109/ipfa.2013.6599149
Autor:
Chen Changqing, Teo Kim Hong, Yogaspari, Liu Binghai, Lee Gek Li, Robin Tan, Tee Irene, Chen Ye, Mo Zhiqiang, Ang Ghim Boon, Yao Yuan, Zhao Si Ping
Publikováno v:
International Symposium for Testing and Failure Analysis.
Abnormal inline defects were caught after nitride spacer etching processes. Detailed MEBES layout checking and inline SEM inspection revealed that such defects always appeared at the boundaries in between PFETs and NFETs regions. The microstructure a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2de068e2587444f5410fd12980720667
https://doi.org/10.31399/asm.cp.istfa2012p0574
https://doi.org/10.31399/asm.cp.istfa2012p0574
Autor:
Neo Soh Ping, Lee Mern Tat, Chen Changqing, Ang Ghim Boon, Ng Hui Peng, Indahwan Jony, Magdeliza G
Publikováno v:
International Symposium for Testing and Failure Analysis.
In this paper, a zero yield case relating to a systematic defect in N+ poly/N-well varactor (voltage controlled capacitor) on the RF analog circuitry will be studied. The systematic problem solving process based on the application of a variety of FA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f47e9584ed97928a20fa0e681d1a821
https://doi.org/10.31399/asm.cp.istfa2012p0370
https://doi.org/10.31399/asm.cp.istfa2012p0370
Autor:
Indahwan Jony, Ang Ghim Boon, David Zhu, Alfred Quah, Magdeliza Magdeliza, Chen Changqing, Neo Soh Ping, Lee Mern Tat
Publikováno v:
International Symposium for Testing and Failure Analysis.
In this paper, a low yield case relating to a systematic array of failures in a ring pattern due to ADC_PLL failures on low yielding wafers will be studied. A systematic problem solving process based on the application of a variety of FA techniques s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aa3169dd923496acdfacf08a8e31876
https://doi.org/10.31399/asm.cp.istfa2010p0058
https://doi.org/10.31399/asm.cp.istfa2010p0058
Publikováno v:
International Symposium for Testing and Failure Analysis.
Wire bonding continues to remain as the dominant chip interconnect technology in the far backend process, regardless of the shrinkage of microchip Al bond pad size and the increase in the number of I/O connections in the modern ICs. The reliability o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9e1d80ea805ded7dd800b6213b3ca7
https://doi.org/10.31399/asm.cp.istfa2010p0249
https://doi.org/10.31399/asm.cp.istfa2010p0249
Publikováno v:
2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Global failure analysis techniques are very critical in the failure site isolation, especially continuous scaling down IC device. Active photon probing is most dominant technique of the global failure analysis technique. In this paper, two real case
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65ae64c5cbfcab51f711af7d4bc73564
https://doi.org/10.1109/ipfa.2010.5531981
https://doi.org/10.1109/ipfa.2010.5531981
Publikováno v:
2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
In this paper, a new FA method was proposed and successfully used in the OTP (one time programmable) memory disturbance failure. The traditional FA method PVC (positive voltage contrast) is employed to detect the failed location, but it failed to fin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a635f230ba8ff30b839163e69f28e620
https://doi.org/10.1109/ipfa.2010.5532005
https://doi.org/10.1109/ipfa.2010.5532005