Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Anestis Gantis"'
Publikováno v:
Microelectronics Reliability. 54:2159-2163
The present paper aims to provide a better insight to the electrical characteristics of silicon nitride films that have been deposited with PECVD method under different conditions. The effect of film thickness, substrate temperature and the frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0014ad8d6f34af482a7376e5d2493a3
https://doi.org/10.1016/j.microrel.2014.08.002
https://doi.org/10.1016/j.microrel.2014.08.002
MIM capacitors are considered equally important devices for the assessment of dielectric charging in RF MEMS capacitive switches. Beside the obvious similarities between the down state condition of RF MEMS and MIM capacitors there are also some impor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c499c3000f09e399f1d6c6a2174efe3c
https://zenodo.org/record/55395
https://zenodo.org/record/55395
Publikováno v:
2014 29th International Conference on Microelectronics Proceedings - MIEL 2014.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f638ed5907645a18714b0d1d293ea9e
https://doi.org/10.1109/miel.2014.6842101
https://doi.org/10.1109/miel.2014.6842101
Autor:
A. Ziaei, George J. Papaioannou, Anestis Gantis, Loukas Michalas, Matroni Koutsoureli, S. Bansropun
Publikováno v:
2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems.
The paper investigates the dielectric charging in nanostructured materials already used or potential candidate for insulating films in MEMS capacitive switches. The investigation takes into account the percolation transport through grain boundaries i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e99642de5f26bcf0f8a9fa4b11e1c4c
https://doi.org/10.1109/sirf.2014.6828516
https://doi.org/10.1109/sirf.2014.6828516
Autor:
Irene Margiolaki, E. Liarokapis, Kazimierz Conder, Eirini Siranidi, Anestis Gantis, M. Calamiotou, Dimitrios Lampakis
Publikováno v:
Acta Crystallographica Section A Foundations of Crystallography. 65:s55-s56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3268e66ca51956faa05afd25fb8fb532
https://doi.org/10.1107/s0108767309098912
https://doi.org/10.1107/s0108767309098912