Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Aneesh Nainani"'
Autor:
Jayeeta Biswas, Aneesh Nainani, P. Swarnkar, Saurabh Lodha, Piyush Bhatt, Abhishek Kumar Misra, Christopher Hatem
Publikováno v:
IEEE Transactions on Electron Devices. 62:69-74
In this paper, we present a detailed study of temperature-based ion implantation of phosphorus dopants in Ge for varying dose and anneal conditions through fabricated n+/p junctions and n-type MOSFETs (nMOSFETs). In comparison with room temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ae0b1e133840f01e5383e555d6ad87d
https://doi.org/10.1109/ted.2014.2372767
https://doi.org/10.1109/ted.2014.2372767
Autor:
Ashish Pal, Zhiyuan Ye, Aneesh Nainani, Xinyu Bao, Errol Antonio C. Sanchez, Krishna C. Saraswat
Publikováno v:
IEEE Transactions on Electron Devices. 60:2238-2245
Process conditions of gallium phosphide (GaP) metal-organic chemical vapor deposition growth on silicon (Si) are optimized by material characterization. Thorough investigation of GaP-Si interface at this optimized growth condition is carried out by e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::994e3a23af02b4415dc03162ec08a6f6
https://doi.org/10.1109/ted.2013.2264495
https://doi.org/10.1109/ted.2013.2264495
Publikováno v:
ECS Transactions. 45:91-96
Antimony (Sb) based compound semiconductor materials have the highest electron and hole mobilities amongst all compound semiconductor materials. Transistors using Sbchannel deliver much higher performance at significantly lower power. As compared to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dbe6186ddb18e4ac20301ed6c36c191
https://doi.org/10.1149/1.3700457
https://doi.org/10.1149/1.3700457
Autor:
Krishna C. Saraswat, Yoshio Nishi, Brian R. Bennett, Toshifumi Irisawa, Ze Yuan, J.B. Boos, Aneesh Nainani
Publikováno v:
IEEE Transactions on Electron Devices. 58:3407-3415
While there have been many demonstrations on n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) in III-V semiconductors showing excellent electron mobility and high drive currents, hole mobility in III-V p-channel MOSFETs (pMOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93c6177ae3ff8ce1bd8adb6631fdfa37
https://doi.org/10.1109/ted.2011.2162732
https://doi.org/10.1109/ted.2011.2162732
Autor:
Brian R. Bennett, Mario G. Ancona, Toshifumi Irisawa, Krishna C. Saraswat, Aneesh Nainani, J. Brad Boos
Publikováno v:
Solid-State Electronics. 62:138-141
In X Ga 1− X Sb has the highest hole mobility amongst all III–V semiconductors which can be enhanced further with the use of strain. The use of confinement and strain in In X Ga 1− X Sb quantum wells lifts the degeneracy between the light and h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27850125d1ec010ecb23cd15e2dd132b
https://doi.org/10.1016/j.sse.2011.04.005
https://doi.org/10.1016/j.sse.2011.04.005
Autor:
Krishna C. Saraswat, Tejas Krishnamohan, Aneesh Nainani, Duygu Kuzum, Piero Pianetta, H.-S. Philip Wong, Yun Sun
Publikováno v:
IEEE Transactions on Electron Devices. 58:59-66
Ge N-MOSFETs have exhibited poor drive currents and low mobility, as reported by several different research groups in the past. The major mechanisms behind poor Ge NMOS performance have not been completely understood yet. In this paper, mechanisms re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d34d08fae34d8000be1b8b49d9b24d
https://doi.org/10.1109/ted.2010.2088124
https://doi.org/10.1109/ted.2010.2088124
Publikováno v:
IEEE Electron Device Letters. 35:717-719
We report high performance Ge p(+)/n junctions using a single, cryogenic (-100 degrees C) boron ion implantation process. High activation >4 x 10(20) cm(-3) results in specific contact resistivity of 1.7 x 10(-8) Omega-cm(2) on p(+)-Ge, which is clos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ece3afd5b9d88ea80e703f5dc458747a
https://doi.org/10.1109/led.2014.2326694
https://doi.org/10.1109/led.2014.2326694
Autor:
Aneesh Nainani, Dhirendra Vaidya, Arjun Hegde, Swaroop Ganguly, Saurabh Lodha, Theresa Kramer Guarini, Naomi Yoshida
Publikováno v:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
To study the High-k dielectrics on alternate semiconductor materials for transistors a modeling platform has been developed which implements a faster 1D Schrodinger-Poisson along with trap models. A fitting algorithm is used for the extraction of tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92b3c8ecc5947172b3954aacd56810f0
https://doi.org/10.1109/sispad.2015.7292341
https://doi.org/10.1109/sispad.2015.7292341
Autor:
Aneesh Nainani, Krishna C. Saraswat, Ze Yuan, Brian R. Bennett, Chien-Yu Chen, J.B. Boos, Archana Kumar
Publikováno v:
IEEE Electron Device Letters. 34:1367-1369
In this letter, we study the formation and electrical properties of Ni-GaSb alloys by direct reaction of Ni with GaSb. It is found that several properties of Ni-antimonide alloys, including low thermal budget processing (300°C), low Schottky barrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd7187df1d4d8e69709251c69b7cae51
https://doi.org/10.1109/led.2013.2280615
https://doi.org/10.1109/led.2013.2280615
Publikováno v:
IEEE Electron Device Letters. 33:29-31
We propose a novel one-transistor (1T) quantum well (QW) DRAM with raised GaP source/drain. This novel device structure shows much better retention time and sense margin than the existing silicon 1T DRAM (with and without QW). Detailed simulation stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::900da5e544be2cbb93d278ec1406c858
https://doi.org/10.1109/led.2011.2171912
https://doi.org/10.1109/led.2011.2171912