Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Andy Zauner"'
Autor:
Mathieu Frégnaux, Damien Aureau, Muriel Bouttemy, Thomas Blevin, Yves Marot, Solène Béchu, Arnaud Etcheberry, Anais Loubat, S. Pouliquen, Peter Uhlig, Jonathan Langlois, Jackie Vigneron, Andy Zauner
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
Even if silicon solar cells are leader on the worldwide market, research keeps to investigate how to go on increasing the efficiencies. Among the different technologies developed, PERC and n-PERT cells are at present the most promising ones. The fine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71fd36e0376421c15aeae5403cc2edb3
https://doi.org/10.1109/pvsc.2018.8547412
https://doi.org/10.1109/pvsc.2018.8547412
Autor:
François Silva, Sergej Filonovich, Andy Zauner, Pavel Bulkin, Pere Roca i Cabarrocas, Fabien Lebreton
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Variation of the substrate temperature within the ALD window during deposition does not significantly impact the growth rate of Al 2 O 3 layers but changes their properties. Reduced initial deposition temperature allows storing hydrogen at the c-Si/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::981eaaf41385765f08923612f849c977
https://doi.org/10.1109/pvsc.2017.8366269
https://doi.org/10.1109/pvsc.2017.8366269
Autor:
Sandrine Lhostis, Canan Baristiran Kaynak, Guenther Ruhl, E Erik Langereis, P. Baumann, Suvi Haukka, Aomar Halimaou, Mindaugas Lukosius, A. Roest, Fred Roozeboom, Benoît Riou, Wolfgang Lehnert, Tom E. Blomberg, Christian Wenger, Wilhelmus M. M. Kessels, W. F. A. Besling, Andy Zauner, Simon A. Rushworth
Publikováno v:
ECS Journal of Solid State Science and Technology, 3(8), N120-N125. Electrochemical Society, Inc.
Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f4e1fab2ef5736482a51f5bd29bebdb
https://research.tue.nl/nl/publications/8b003621-69a1-40e9-80cc-8be45bf67d39
https://research.tue.nl/nl/publications/8b003621-69a1-40e9-80cc-8be45bf67d39
Autor:
Pluton Pullumbi, Anthony Correia Anacleto, David Cany-Canian, Changhee Ko, Andy Zauner, Julien Gatineau, Marie-Christine Hugon
Publikováno v:
ECS Meeting Abstracts. :1123-1123
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5bef06cf42668d1b091e99bb8a69a9b
https://doi.org/10.1149/ma2010-01/21/1123
https://doi.org/10.1149/ma2010-01/21/1123