Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Andy Paul Chen"'
Publikováno v:
Physical Review Materials. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62ebb7bd3b53ba454a21544961420fef
https://doi.org/10.1103/physrevmaterials.6.063404
https://doi.org/10.1103/physrevmaterials.6.063404
Autor:
Andy Paul Chen, Guangsheng Fu, Zhenyu Zhou, Jingsheng Chen, Gong Wang, Xiaobing Yan, Jianhui Zhao, Yifei Pei, Zuoao Xiao
Publikováno v:
Materials Horizons. 7:1106-1114
Electronic synaptic memristor systems have the potential to bring revolutionary change to traditional computer structures and to lay a solid foundation for the development of computer architectures simulating artificial brains. Among them, silver (Ag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b850ff1f3fbf3e9b1d63bdc07c5fb416
https://doi.org/10.1039/c9mh01684h
https://doi.org/10.1039/c9mh01684h
Publikováno v:
Nanoscale. 12:13531-13539
Carbon quantum dots (QDs) have attracted significant interest due to their excellent electronic properties and wide application prospects. However, the application of carbon QDs has been rarely reported in memristors. Here, a memristor model with car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::012282504af3d0dad4834b31404b9691
https://doi.org/10.1039/d0nr02894k
https://doi.org/10.1039/d0nr02894k
Autor:
Shalabh Srivastava, Andy Paul Chen, Yifan Liu, Yuan Ping Feng, Yang Liu, Lizhu Ren, Kie Leong Teo, Hyunsoo Yang
Publikováno v:
ACS Applied Electronic Materials. 1:1251-1260
We report a large interfacial perpendicular magnetic anisotropy (PMA) in [Fe2CoSi/Pt]n (FCS/Pt) multilayers deposited on thermally oxidized Si substrates. A maximum anisotropy energy density, Ku, of 2.64 Merg/cm3 is achieved with an optimized stack.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4e32cd7cee2f432a5a3852a478b3a2a
https://doi.org/10.1021/acsaelm.9b00208
https://doi.org/10.1021/acsaelm.9b00208
Publikováno v:
ACS applied materialsinterfaces. 12(39)
The ferroelectric switching effect on perpendicular magnetic anisotropy is examined for the case of the BaTiO3/L10-CoFe interface through first-principles calculations of film magnetocrystalline anisotropy energy (MAE), both with the frozen-potential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0d04d70d12900cfe14e64c2704c8ca1
https://pubmed.ncbi.nlm.nih.gov/32894937
https://pubmed.ncbi.nlm.nih.gov/32894937
Autor:
Andy Paul Chen, Yuan Ping Feng
Publikováno v:
ACS applied materialsinterfaces. 12(22)
Electric-field control of magnetocrystalline anisotropy energy (MAE) is important for the optimal performance of the tunnel junction components of the STT-MRAM. In such a device, a high MAE of the free magnetic layer improves storage robustness, wher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::569a7642f84ff2c6fca97c78df1e9e36
https://pubmed.ncbi.nlm.nih.gov/32392027
https://pubmed.ncbi.nlm.nih.gov/32392027
Autor:
Andy Paul Chen, Silvia Tacchi, Gan Moog Chow, Qidong Xie, Liang Liu, Yajuan Hui, Xinyu Shu, Hongxin Yang, Baishun Yang, Rui Guo, Weinan Lin, Yuan Ping Feng, Giovanni Carlotti, Jingsheng Chen, Shaohai Chen, Xiaohan Wu
Publikováno v:
Physical review letters. 124(21)
We report on the study of both perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interaction (DMI) at an oxide/ferromagnetic metal (FM) interface, i.e. BaTiO3 (BTO)/CoFeB. Thanks to the functional properties of the BTO film and the ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1847f74f2de600699e86776d41ac7e80
https://pubmed.ncbi.nlm.nih.gov/32530667
https://pubmed.ncbi.nlm.nih.gov/32530667
Autor:
Shalabh Srivastava, Hyunsoo Yang, Kangho Lee, Yuan Ping Feng, Kazutaka Yamane, Mohammad S. M. Saifullah, Tanmay Dutta, Jaesung Son, Rajagopalan Ramaswamy, Kie Leong Teo, Andy Paul Chen
Publikováno v:
Physical Review Applied. 10
The Co-Fe-B/MgO system with perpendicular magnetic anisotropy finds extensive application in modern magnetic memories. Critical issues for the practical usage of magnetic tunnel junctions (MTJs) include the limited thermal stability of bit storage, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df376adaa10c1b7b45b6c809cb5f5c5a
https://doi.org/10.1103/physrevapplied.10.024031
https://doi.org/10.1103/physrevapplied.10.024031
Publikováno v:
Physical Review B. 98
Using density-functional theory calculations, we investigate the dominant defects formed by boron (B) and carbon (C) impurities in a CoFe/MgO/CoFe magnetic tunnel junction (MTJ) and their influence on conductivity and tunneling magnetoresistance (TMR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7aa030f57052461af38c3c6995bd5fa
https://doi.org/10.1103/physrevb.98.045129
https://doi.org/10.1103/physrevb.98.045129
Autor:
Gong Wang, Yifei Pei, Xiaoyan Li, Jingjuan Wang, Qi Liu, Deliang Ren, Xiaobing Yan, Kaiyang Wang, Qianlong Zhao, Andy Paul Chen, Hui Li, Hong Wang, Zuoao Xiao, Cuiya Qin, Jianhui Zhao, Jingsheng Chen, Zhenyu Zhou, Lei Zhang
Publikováno v:
Small. 15:1901423
Memristors with nonvolatile memory characteristics have been expected to open a new era for neuromorphic computing and digital logic. However, existing memristor devices based on oxygen vacancy or metal-ion conductive filament mechanisms generally ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7165322939da4ef10ee16d0f890bef3b
https://doi.org/10.1002/smll.201901423
https://doi.org/10.1002/smll.201901423