Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Andrzej Taube"'
Autor:
Kozubal Maciej, A., Karolina, Pągowska, Andrzej, Taube, Renata, Kruszka, Monika, Masłyk, Kamińska, Eliana
Publikováno v:
In Materials Science in Semiconductor Processing 1 August 2022 146
Autor:
Ernest Brzozowski, Maciej Kaminski, Andrzej Taube, Oskar Sadowski, Krystian Krol, Marek Guziewicz
Publikováno v:
Materials, Vol 16, Iss 12, p 4381 (2023)
The electrical and physical properties of the SiC/SiO2 interfaces are critical for the reliability and performance of SiC-based MOSFETs. Optimizing the oxidation and post-oxidation processes is the most promising method of improving oxide quality, ch
Externí odkaz:
https://doaj.org/article/a76ec9e34bc54cb8bca0699a208348e6
Autor:
Andrzej Taube, Maciej Kaminski, Jaroslaw Tarenko, Oskar Sadowski, Marek Ekielski, Anna Szerling, Pawel Prystawko, Michal Bockowski, Izabella Grzegory
Publikováno v:
IEEE Transactions on Electron Devices. 69:6255-6259
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c3bcd74442ddb2f4a3e0cb443901757
https://doi.org/10.1109/ted.2022.3208851
https://doi.org/10.1109/ted.2022.3208851
Autor:
Guziewicz, Ernest Brzozowski, Maciej Kaminski, Andrzej Taube, Oskar Sadowski, Krystian Krol, Marek
Publikováno v:
Materials; Volume 16; Issue 12; Pages: 4381
The electrical and physical properties of the SiC/SiO2 interfaces are critical for the reliability and performance of SiC-based MOSFETs. Optimizing the oxidation and post-oxidation processes is the most promising method of improving oxide quality, ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::ae35a54d34e0a91c8aeac45fb15451f5
Akademický článek
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Autor:
Malgorzata Iwinska, Pawel Prystawko, Andrzej Taube, Kacper Sierakowski, Rafal Jakiela, Michal Bockowski
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9002a02dd6a25235335efa682ad5b41
https://doi.org/10.1117/12.2607583
https://doi.org/10.1117/12.2607583
Autor:
Anna Szerling, Andrzej Taube, Maciej Kaminski, Marek Ekielski, Jarosław Tarenko, Karolina Pągowska, Maciej Kozubal, Kamil Kosiel, Renata Kruszka, Krystyna Golaszewska-Malec, Ernest Brzozowski, Norbert Kwietniewski, Ryszard Kisiel
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::499eef8b080173fa26740ee678489148
https://doi.org/10.1117/12.2611724
https://doi.org/10.1117/12.2611724
Publikováno v:
Circuit World. 47:146-152
PurposeThis paper aims to investigate the sintering and solid liquid interdiffusion bonding (SLID) techniques to attach AlGaN/GaN-on-Si chips to direct bond copper (DBC) substrate. The influence of metal layers deposited on the backside of AlGaN/GaN-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64181b1f7e958c6b13eae66ff82c5f11
https://doi.org/10.1108/cw-12-2019-0186
https://doi.org/10.1108/cw-12-2019-0186
Autor:
Andrzej Taube, Michał A. Borysiewicz, Oskar Sadowski, Aleksandra Wójcicka, Jarosław Tarenko, Krzysztof Piskorski, Marek Wzorek
Publikováno v:
Materials Science in Semiconductor Processing. 154:107218
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39e0cd630a04b3a75a9db3c661e030e2
https://doi.org/10.1016/j.mssp.2022.107218
https://doi.org/10.1016/j.mssp.2022.107218
Autor:
Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, Marek Ekielski, Eliana Kamińska, Andrzej Taube, Marek Wzorek
Publikováno v:
Micromachines, Vol 9, Iss 11, p 546 (2018)
AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobilit
Externí odkaz:
https://doaj.org/article/3b8d577d5d7240e7ba84e212384c9c80