Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Andrzej Kowalewski"'
Publikováno v:
Opto-Electronics Review.
Publikováno v:
Acta Physica Polonica A. 132:1415-1419
Autor:
Jozef Piotrowski, Piotr Martyniuk, Antoni Rogalski, D. Stępień, A. Piotrowski, Małgorzata Kopytko, Andrzej Kowalewski, A. Kębłowski, Kacper Grodecki, Waldemar Gawron
Publikováno v:
Metrology and Measurement Systems, Vol 24, Iss 3, Pp 509-514 (2017)
In this work we report simulation and experimental results for an MWIR HgCdTe photodetector designed by computer simulation and fabricated in a joint laboratory run by VIGO Sytems S.A. and Military University of Technology. The device is based on a m
Autor:
Jozef Piotrowski, Paweł Madejczyk, A. Jóźwikowska, Małgorzata Kopytko, Antoni Rogalski, Andrzej Kowalewski, Piotr Martyniuk, Olga Markowska, K. Jóźwikowski, Waldemar Gawron, Andrzej Martyniuk
Publikováno v:
Journal of Electronic Materials. 46:5471-5478
We present the results of numerical simulations and experimental data of band gap-engineered higher operating temperature mercury cadmium telluride barrier photodiodes working in a middle wavelength infrared radiation and a long wavelength infrared r
Autor:
Piotr Martyniuk, Antoni Rogalski, Paweł Madejczyk, Andrzej Kowalewski, Małgorzata Kopytko, Olga Markowska, K. Jóźwikowski, Jaroslaw Rutkowski, Waldemar Gawron
Publikováno v:
Journal of Electronic Materials. 45:4563-4573
In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technolo
Autor:
Antoni Rogalski, D. Benyahia, Ł. Kubiszyn, D. Stępień, Waldemar Gawron, Piotr Martyniuk, Andrzej Kowalewski
Publikováno v:
Solid-State Electronics. 119:1-4
In this paper we report on high operating temperature mid-wave infrared detector based on type-II superlattice InAs/GaSb mesa PIN architecture with 50% cut-off wavelength ∼5.2 μm at 230 K. The 1.1 mm thick GaAs substrate was converted into immersi
Autor:
Krystian Michalczewski, D. Benyahia, Antoni Rogalski, Andrzej Kowalewski, Piotr Martyniuk, D. Stępień, Waldemar Gawron
Publikováno v:
IEEE Electron Device Letters. 37:64-66
Mid-wave infrared technology is dominated by HgCdTe ternary alloy. As of now, InAs/GaSb type-II superlattice has shown the theoretical potential to compete with HgCdTe. Type-II superlattice InAs/GaSb technology is under development, where proper dete
Publikováno v:
12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods.
Interband cascade type-II mid-wavelength infrared (MWIR) InAs/GaSb superlattice (T2SL) detector in room temperature (300 K) is investigated. A single stage in the cascade is a double heterostructure with the absorber sandwiched between electron and h
Autor:
Przemysław Kula, Wiktor Piecek, Jakub Herman, Urszula Chodorow, Piotr Martyniuk, Andrzej Kowalewski, Przemysław Morawiak, Waldemar Gawron, Rafał Mazur
Publikováno v:
12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods.
In this paper a two liquid crystal (LC) modulators for mid-wave infrared radiation (MWIR) are presented. A two electrooptical effects (EOE) in liquid crystalline structures have been utilized for MWIR modulation: electric field induced cholesteric -
Publikováno v:
12th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods.
Most of the HgCdTe infrared detectors are fabricated by mesa geometry using a wet chemical or plasma etching techniques. The mesa definition etch process induces undesirable changes in HgCdTe surface properties. In narrow bandgap materials these surf