Zobrazeno 1 - 10
of 241
pro vyhledávání: '"Andriy Zakutayev"'
Autor:
Drew Haven, Helio Moutinho, John S. Mangum, Harvey Guthrey, David Joyce, Andriy Zakutayev, Nancy M. Haegel
Publikováno v:
AIP Advances, Vol 13, Iss 7, Pp 075122-075122-5 (2023)
Beta-phase gallium oxide (β-Ga2O3) has attracted attention in recent years as a potentially low cost, large area substrate and active layer material for high power, high temperature power electronics and sensing devices. However, growth of β-Ga2O3
Externí odkaz:
https://doaj.org/article/e8beb8db17e0471b905c507c5c4fd6ce
Autor:
Davi M. Fébba, Kevin R. Talley, Kendal Johnson, Stephen Schaefer, Sage R. Bauers, John S. Mangum, Rebecca W. Smaha, Andriy Zakutayev
Publikováno v:
APL Materials, Vol 11, Iss 7, Pp 071119-071119-9 (2023)
Autonomous experimentation has emerged as an efficient approach to accelerate the pace of material discovery. Although instruments for autonomous synthesis have become popular in molecular and polymer science, solution processing of hybrid materials,
Externí odkaz:
https://doaj.org/article/c288eaade20143efa4c12036cd2a274a
Autor:
Emily M. Garrity, Cheng-Wei Lee, Prashun Gorai, M. Brooks Tellekamp, Andriy Zakutayev, Vladan Stevanović
Publikováno v:
PRX Energy, Vol 1, Iss 3, p 033006 (2022)
As electricity grids become more renewable energy compliant, there will be a need for novel semiconductors that can withstand high power, high voltage, and high temperatures. Currently used or explored wide-band-gap materials for power electronics ar
Externí odkaz:
https://doaj.org/article/b27084d3b1ca4a0c9565a683e6212567
Publikováno v:
Sensors, Vol 22, Iss 24, p 9659 (2022)
A high-speed and high-power current measurement instrument is described for measuring rapid switching of ferroelectric samples with large spontaneous polarization and coercive field. Instrument capabilities (±200 V, 200 mA, and 200 ns order response
Externí odkaz:
https://doaj.org/article/2e4469eb68da43fdbc8ca6e3ceffcbf0
Autor:
Paul F. Ndione, Erin L. Ratcliff, Suhash R. Dey, Emily L. Warren, Haowei Peng, Aaron M. Holder, Stephan Lany, Brian P. Gorman, Mowafak M. Al-Jassim, Todd G. Deutsch, Andriy Zakutayev, David S. Ginley
Publikováno v:
ACS Omega, Vol 4, Iss 4, Pp 7436-7447 (2019)
Externí odkaz:
https://doaj.org/article/e99a0dcd2ee4482c8a1801ba66c0b7eb
Publikováno v:
Micromachines, Vol 13, Iss 6, p 887 (2022)
Currently, there is a lack of nonvolatile memory (NVM) technology that can operate continuously at temperatures > 200 °C. While ferroelectric NVM has previously demonstrated long polarization retention and >1013 read/write cycles at room temperature
Externí odkaz:
https://doaj.org/article/3885ffea224640ada5e365e5c4f33a3c
Autor:
Max Birkett, Christopher N. Savory, Mohana K. Rajpalke, Wojciech M. Linhart, Thomas J. Whittles, James T. Gibbon, Adam W. Welch, Ivona Z. Mitrovic, Andriy Zakutayev, David O. Scanlon, Tim D. Veal
Publikováno v:
APL Materials, Vol 6, Iss 8, Pp 084904-084904-9 (2018)
The temperature-dependence of the band gap of the proposed photovoltaic absorber copper antimony sulphide (CuSbS2) has been studied by Fourier-transform infrared spectroscopy. The direct gap rises from 1.608 to 1.694 eV between 300 and 4.2 K. Below 2
Externí odkaz:
https://doaj.org/article/bdc6b5b86e2343759aad5fc399f67394
Publikováno v:
APL Materials, Vol 6, Iss 8, Pp 084501-084501-13 (2018)
Copper antimony chalcogenides CuSbCh2 (Ch=S, Se) are an emerging family of absorbers studied for thin-film solar cells. These non-toxic and Earth-abundant materials show a layered low-dimensional chalcostibite crystal structure, leading to interest
Externí odkaz:
https://doaj.org/article/6765c4c78f604b6e9d8c4e830979c84b
Publikováno v:
APL Materials, Vol 4, Iss 10, Pp 106103-106103-9 (2016)
All-oxide photovoltaics could open rapidly scalable manufacturing routes, if only oxide materials with suitable electronic and optical properties were developed. SnO has exceptional doping and transport properties among oxides, but suffers from a str
Externí odkaz:
https://doaj.org/article/82ccd45f9c4b496e91ea1a1068923171
Autor:
Archana Subramaniyan, John D. Perkins, Ryan P. O’Hayre, Stephan Lany, Vladan Stevanovic, David S. Ginley, Andriy Zakutayev
Publikováno v:
APL Materials, Vol 2, Iss 2, Pp 022105-022105-6 (2014)
Cuprous oxide (Cu2O) is actively studied as a prototypical material for energy conversion and electronic applications. Here we reduce the growth temperature of phase pure Cu2O thin films to 300 °C by intentionally controlling solely the kinetic para
Externí odkaz:
https://doaj.org/article/bad5ea642dd14c12a378317218bdd5aa