Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Andriy Yakovitch Hikavyy"'
Autor:
Erik Rosseel, Clement Porret, Andriy Yakovitch Hikavyy, Roger Loo, Olivier Richard, Gerardo Tadeo Martinez, Dmitry Batuk, Hans Mertens, Eugenio Dentoni Litta, Naoto Horiguchi
Publikováno v:
ECS Transactions. 109:93-98
We report on selectively grown Si:P layers below 500°C targeting application in stacked nanosheet-based devices. In contrast to conventional approaches where selectivity is obtained at low temperatures using Cyclic-Deposition and Etch (CDE) with HCl
Autor:
Anurag Vohra, Clement Porret, Erik Rosseel, Andriy Yakovitch Hikavyy, Elena Capogreco, Naoto Horiguchi, Roger Loo, Wilfried Vandervorst
Publikováno v:
ECS Transactions. 93:29-33
Autor:
Gianluca Rengo, Clement Porret, Andriy Yakovitch Hikavyy, Gitte Coenen, Mustafa Ayyad, Richard J. H. Morris, Simone Pollastri, Danilo Oliveira De Souza, Didier Grandjean, Roger Loo, Andre Vantomme
Publikováno v:
ECS Meeting Abstracts. :1216-1216
Over the last few decades, MOSFET architectures have evolved from planar to 3D structures (FinFET and, more recently, gate-all-around and Forksheet devices) to improve the channel control at very scaled dimensions. In this framework, highly doped con
Autor:
Roger Loo, Nicolas Gosset, Megumi Isaji, Yumi Kawamura, Andriy Yakovitch Hikavyy, Erik Rosseel, Clement Porret, Ankit Nalin Mehta, Jean-Marc Girard
Publikováno v:
ECS Meeting Abstracts. :1194-1194
Forksheet transistors are lateral nanosheet devices with a forked gate structure [1,2]. The physical separation of N- and PFETs by a dielectric wall enables N-P space scaling and consequently sheet width maximization within the limited footprint of l
Autor:
Erik Rosseel, Clement Porret, Andriy Yakovitch Hikavyy, Roger Loo, Olivier Richard, Gerardo Tadeo Martinez, Dmitry Batuk, Hans Mertens, Eugenio Dentoni Litta, Naoto Horiguchi
Publikováno v:
ECS Meeting Abstracts. :1188-1188
With the introduction of novel stacked CMOS transistor integration schemes such as sequential 3D and CFETs [1,2], there is an increasing need for highly active source/drain layers with a low overall thermal budget. For some integration schemes, proce
Autor:
Clement Porret, Andriy Yakovitch Hikavyy, Juan Fernando Gomez Granados, Sylvain Baudot, Anurag Vohra, Bernardette Kunert, Bastien Douhard, Janusz Bogdanowicz, Marc Schaekers, David Kohen, Joe Margetis, John Tolle, Lucas Lima, Amir Sammak, Giordano Scappucci, Erik Rosseel, Robert Langer, Roger Loo
Publikováno v:
ECS Meeting Abstracts. :1050-1050
Microelectronic devices enable the continuous improvement in mobile data exchange and mobile communication. This exciting technological progress has been achieved by transistor scaling, resulting in an increased performance for lower energy consumpti
Autor:
Janusz Bogdanowicz, Brigitte Parmentier, Andreas Schulze, Alain Moussa, Clement Merckling, Bernardette Kunert, Weiming Guo, Yves Mols, Clement Porret, Erik Rosseel, Andriy Yakovitch Hikavyy, Ole Hansen, Dirch H. Petersen, Henrik H. Henrichsen, Peter F. Nielsen, Wilfried Vandervorst
Publikováno v:
ECS Meeting Abstracts. :2008-2008
Since the advent of non-planar metal-oxide-semiconductor (MOS) transistors, embodied by the three-dimensional fin field-effect transistors (finFETs), there has been a rising need for fast in-line metrology solutions for the electrical characterizatio