Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Andrius Biciunas"'
Autor:
Ignas Grigelionis, Vladislovas Čižas, Mindaugas Karaliūnas, Vytautas Jakštas, Kȩstutis Ikamas, Andrzej Urbanowicz, Marius Treideris, Andrius Bičiūnas, Domas Jokubauskis, Renata Butkutė, Linas Minkevičius
Publikováno v:
Sensors, Vol 23, Iss 10, p 4600 (2023)
We report on the experimental evidence of thermal terahertz (THz) emission tailored by magnetic polariton (MP) excitations in entirely GaAs-based structures equipped with metasurfaces. The n-GaAs/GaAs/TiAu structure was optimized using finite-differe
Externí odkaz:
https://doaj.org/article/32facd91444e4156b43745be0f0b5562
Autor:
Simona Armalytė, Justinas Glemža, Vytautas Jonkus, Sandra Pralgauskaitė, Jonas Matukas, Simona Pūkienė, Andrea Zelioli, Evelina Dudutienė, Arnas Naujokaitis, Andrius Bičiūnas, Bronislovas Čechavičius, Renata Butkutė
Publikováno v:
Sensors, Vol 23, Iss 4, p 2282 (2023)
Fabry–Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780–1100 nm spectral range were fabricated and investigated for optimization of the laser QW d
Externí odkaz:
https://doaj.org/article/38f3c98179fc453ca959d0c2a2279eb8
Autor:
Tommi Kaplas, Vytautas Jakstas, Andrius Biciunas, Algimantas Luksa, Arunas Setkus, Gediminas Niaura, Irmantas Kasalynas
Publikováno v:
Condensed Matter, Vol 4, Iss 1, p 21 (2019)
Graphene has shown great potential for ultra-high frequency electronics. However, using graphene in electronic devices creates a requirement for electrodes with low contact resistance. Thermal annealing is sometimes used to improve the performance of
Externí odkaz:
https://doaj.org/article/68df84ff04824c5fa6a454c2dbfd4101
Autor:
Justinas Glemza, Sandra Pralgauskaite, Jonas Matukas, Simona Pukiene, Andrea Zelioli, Andrius Biciunas, Bronislovas Cechavicius, Viktorija Nargeliene, Renata Butkute
Publikováno v:
2022 24th International Microwave and Radar Conference (MIKON).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::393101d81fc78e61b6dccd1bc4a93efb
https://doi.org/10.23919/mikon54314.2022.9924785
https://doi.org/10.23919/mikon54314.2022.9924785
Autor:
Andrius Biciunas, Sari Suvanto, Marian Baah, Polina Kuzhir, Alesia Paddubskaya, Yuri Svirko, Tommi Kaplas, Petr A. Obraztsov
Publikováno v:
ACS Applied Materials & Interfaces
We demonstrate that predepositing a nanometrically thin nickel film on a dielectric surface is sufficient to transform an amorphous pyrolyzed photoresist film (PPF) into a graphitic film (GRF) enriched with nickel particles. The GRF shows 3 orders of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a19df970f8499112a686107d46dac73f
https://doi.org/10.1021/acsami.9b18906
https://doi.org/10.1021/acsami.9b18906
Autor:
Andrius Biciunas, Gediminas Niaura, Algimantas Lukša, Irmantas Kašalynas, Tommi Kaplas, Arunas Setkus, Vytautas Jakštas
Publikováno v:
Condensed Matter
Volume 4
Issue 1
Condensed Matter, Vol 4, Iss 1, p 21 (2019)
Volume 4
Issue 1
Condensed Matter, Vol 4, Iss 1, p 21 (2019)
Graphene has shown great potential for ultra-high frequency electronics. However, using graphene in electronic devices creates a requirement for electrodes with low contact resistance. Thermal annealing is sometimes used to improve the performance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e382e3358f6f66d9b924f76d13b4424f
Publikováno v:
2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
Microscopical models of surface THz emission from narrow-gap semiconductors are proposed; the experimental study reveals the potential of such emitters for their applications in THz-TDS systems.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2386acbd906a14aef16ae6b1b607db8
https://doi.org/10.1109/irmmw-thz.2017.8067099
https://doi.org/10.1109/irmmw-thz.2017.8067099
Publikováno v:
IEEE Transactions on Terahertz Science and Technology
IEEE Transactions on Terahertz Science and Technology, Institute of Electrical and Electronics Engineers, 2015, 5 (5), pp.828-835. ⟨10.1109/TTHZ.2015.2460452⟩
IEEE Transactions on Terahertz Science and Technology, Institute of Electrical and Electronics Engineers, 2015, 5 (5), pp.828-835. ⟨10.1109/TTHZ.2015.2460452⟩
Based on optical rectification in a ZnTe crystal, a vectorial terahertz (THz) emitter is here theoretically and experimentally demonstrated. The use of the particular orientation $\langle 111\rangle$ leads to a polarization state angle tunable THz so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b8d5b87d6e63185ec2d0074e1dabd2e
https://hal.archives-ouvertes.fr/hal-01996571
https://hal.archives-ouvertes.fr/hal-01996571
Publikováno v:
physica status solidi c. 6:2649-2651
Gallium bismide arsenide epitaxial layers were grown by molecular-beam-epitaxy at low substrate temperatures and investigated for their suitability in terahertz optoelectronic applications. Optical pump-terahertz probe measurements on these layers ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9c4a6cb1ee202451c74d8a42b2149ac
https://doi.org/10.1002/pssc.200982538
https://doi.org/10.1002/pssc.200982538