Traitements thermochimiques basse température assistés par plasmas d'un acier inoxydable austénitique pour la micro-structuration de surface d'un contact lubrifié

Autor: Andrieux, Aurore

Une micro-structuration de surface peut améliorer les propriétés en frottement d’un contact lubrifié grâce à la génération de pression hydrodynamique. Ce travail s’inscrit dans le cadre du projet ANR MicroGaMe, dont l’objectif était de

Externí odkaz: http://www.theses.fr/2015LORR0095/document

Supercontinuum generation in ICP-CVD silicon-rich silicon nitride waveguides

Autor: Jayantha Ayesha, Andrieux Aurore, Gallet Isabelle, Finot Christophe, Hammani Kamal

Publikováno v: EPJ Web of Conferences, Vol 287, p 01001 (2023)

Inductively coupled plasma chemical vapor deposition was used to obtain thin films of siliconrich silicon nitride with a refractive index of 2.44 at optical telecommunications wavelength. The resulting layer was patterned into a 1.6 μm wide waveguid

Externí odkaz: https://doaj.org/article/7076d2090c0743389d3ac2c07fb254b2

Optimized ICPCVD-Based TiO 2 for Photonics.

Autor: Andrieux, Aurore¹ (AUTHOR) aurore.andrieux@u-bourgogne.fr, Mennemanteuil, Marie-Maxime¹ (AUTHOR) nicolas.geoffroy@u-bourgogne.fr, Geoffroy, Nicolas¹ (AUTHOR) laurent.markey@u-bourgogne.fr, Emo, Mélanie² (AUTHOR) melanie.emo@univ-lorraine.fr, Markey, Laurent¹ (AUTHOR) kamal.hammani@u-bourgogne.fr, Hammani, Kamal¹ (AUTHOR)

Publikováno v: Materials (1996-1944). Apr2022, Vol. 15 Issue 7, p2578-2578. 13p.

High quality single crystal recrystallization of thin 4H-SiC films deposed by PVD techniques, a way for new emerging fields

Autor: Usureau, Elise, Vuillermet, Enora, Lazar, Mihai, Andrieux, Aurore, Jacquemot, Alexandre

Publikováno v: 19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022
19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022, Sep 2022, Davos, Switzerland

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::66b076e7f860269f7a8e882bbec86243
https://hal.science/hal-03856621

High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields

Autor: Usureau, Elise, Vuillermet, Enora, Lazar, Mihai, Andrieux, Aurore, Jacquemot, Alexandre

Publikováno v: Diffusion and Defect Data Part B: Solid State Phenomena; May 2023, Vol. 343 Issue: 1 p21-28, 8p