Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Andrey Soukhojak"'
Autor:
Gil Chung, Robert Viveros, Charles Lee, Andrey Soukhojak, Vladimir Pushkarev, Qian Yu Cheng, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Defect and Diffusion Forum. 425:51-56
Correlation of X-ray topography and production line defect inspection tools has demonstrated the capability of in-line tools to differentiate between geometrically comparable basal plane slip bands (BPSB) and bar stacking faults (BSF) on 4H SiC wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c93ed482f31a58c44477c543c94089c
https://doi.org/10.4028/p-35058b
https://doi.org/10.4028/p-35058b
Publikováno v:
Materials Science Forum. 1089:31-35
Photoluminescence (PL) signatures of 4H-SiC bare and epitaxial wafers from a surface inspection tool have been studied. Large variations in PL black or white dot densities were confirmed for comparable crystal quality and growth process conditions. C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63778ed2129c801ec5643b3c9ff22cc3
https://doi.org/10.4028/p-m4937e
https://doi.org/10.4028/p-m4937e
Autor:
Andrey Soukhojak, Tyler Stannard, Ian Manning, Charles Lee, Gil Chung, Matthew Gave, Edward Sanchez
Publikováno v:
Materials Science Forum. 1062:304-308
X-ray topography (XRT) presents itself as an attractive non-destructive method to replace industry-standard destructive KOH etching used to measure dislocation density. However, a production-line-compatible XRT has to employ a low scan speed in order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe8ac11189bbbdcc66e64619b7e30cad
https://doi.org/10.4028/p-37781z
https://doi.org/10.4028/p-37781z
Publikováno v:
Materials Science Forum. 1062:99-103
It is known that generation of interfacial dislocation on SiC epitaxy depends mainly on misfit strain between substrate and the epilayer. In this paper, we investigate the impact of temperature profile, doping profile of the epilayer and resistivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7859ccb9eecb30e3fabc867bc6195893
https://doi.org/10.4028/p-11oe88
https://doi.org/10.4028/p-11oe88
Publikováno v:
Materials Science Forum. 1062:246-250
Post-growth thermal processing at higher temperature generates more BPDs (basal plane dislocations). It is observed that dislocation visibility in surface inspection tool images varies significantly even at comparable dislocation densities. Combinati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa115d9e7f7712c0ee9ddc55da241de5
https://doi.org/10.4028/p-43627c
https://doi.org/10.4028/p-43627c
Autor:
Ian Manning, Kevin Moeggenborg, Andrey Soukhojak, Jon Searson, Matthew Gave, Gil Chung, Edward Sanchez
Publikováno v:
Materials Science Forum. 1062:54-58
200 mm diameter n-type 4H SiC wafers were produced from bulk crystals grown using a physical vapor transport (PVT) method. The configuration of the growth cell was modified to both allow for the growth of larger crystals with respect to the standard
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::865b7346b44f5fd3fdbe6afa05992286
https://doi.org/10.4028/p-3iz201
https://doi.org/10.4028/p-3iz201
Selected peer-reviewed extended articles based on abstracts presented at the 19th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2022Aggregated Book
Special topic volume with invited peer-reviewed papers only
Special topic volume with invited peer-reviewed papers only
Special topic volume with invited peer-reviewed papers only