Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Andrey S. Shportenko"'
Autor:
Aleksandr M. Kislyuk, Ilya V. Kubasov, Alexander A. Temirov, Andrei V. Turutin, Andrey S. Shportenko, Viktor V. Kuts, Mikhail D. Malinkovich
Publikováno v:
Modern Electronic Materials, Vol 9, Iss 4, Pp 145-161 (2023)
Charged domain walls (CDWs) in ferroelectric materials raise both fundamental and practical interest due to their electrophysical properties differing from bulk ones. On a microstructure level, CDWs in ferroelectrics are 2D defects separating regions
Externí odkaz:
https://doaj.org/article/87ec33e3c9a042f6b176cf74b6f524c7
Autor:
Aleksandr M. Kislyuk, Tatiana S. Ilina, Ilya V. Kubasov, Dmitry A. Kiselev, Aleksandr A. Temirov, Andrei V. Turutin, Andrey S. Shportenko, Mikhail D. Malinkovich, Yuri N. Parkhomenko
Publikováno v:
Modern Electronic Materials, Vol 8, Iss 1, Pp 15-22 (2022)
In this work, the effect of long-term room temperature exposure on the electrical conductivity of the charged domain wall (CDWs) in nonpolar x-cut congruent lithium niobate (LiNbO3, LN) crystals has been studied. Bidomain ferroelectric structures con
Externí odkaz:
https://doaj.org/article/e39ed6e5d4e94106b8198497df709bae
Autor:
Andrey S. Shportenko, Alexander M. Kislyuk, Andrei V. Turutin, Ilya V. Kubasov, Mikhail D. Malinkovich, Yuri N. Parkhomenko
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 4, Pp 167-175 (2021)
Lithium niobate is a ferroelectric material finding a wide range of applications in optical and acoustic engineering. Annealing of lithium niobate crystals in an oxygen-free environment leads to appearance of black coloration and concomitant increasi
Externí odkaz:
https://doaj.org/article/18c09214df2b4b52a273c86ad73b65bf
Autor:
A. M. Kislyuk, Mikhail D. Malinkovich, Andrei V. Turutin, Dmitry A. Kiselev, Andrey S. Shportenko, Yuriy N. Parkhomenko, Aleksandr A. Temirov, Tatiana S. Ilina, I. V. Kubasov
Publikováno v:
Journal of Materials Chemistry C. 9:15591-15607
Among many materials considered for use in domain-wall nanoelectronics, lithium niobate (LiNbO3, LN) represents one of the most technologically important and physically stable materials. Compared with many other reports where inclined domain walls ar
Publikováno v:
2021 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO).
The features of the behavior of the impedance characteristics of porous silicon layers are studied.