Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Andrey N. Anisimov"'
Publikováno v:
Physical Review Research, Vol 4, Iss 2, p 023022 (2022)
Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requirement for quantum information processing. In a low magnetic field, the re
Externí odkaz:
https://doaj.org/article/ce79535fe1fe401389fff8ca6b1e05d0
Autor:
Alexander A. Lebedev, Pavel A. Ivanov, Michael E. Levinshtein, Evgenii N. Mokhov, Sergei S. Nagalyuk, Andrey N. Anisimov, Pavel G. Baranov
Publikováno v:
Uspekhi Fizicheskih Nauk. 189:803-848
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65f88c5626fa9e3622fe69c9933e36ee
https://doi.org/10.3367/ufnr.2018.10.038437
https://doi.org/10.3367/ufnr.2018.10.038437
Publikováno v:
Materials Research Express, Vol 10, Iss 11, p 116201 (2023)
Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in ea
Externí odkaz:
https://doaj.org/article/1ccff658c15a446eb07a9f4216a2bec7