Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Andrey Gismatulin"'
Autor:
Timofey Viktorovich Perevalov, V.A. Volodin, Gennadiy Kamaev, Andrey Gismatulin, Svetlana Cherkova, Igor' Prosvirin, Kseniya Astankova, Vladimir Gritsenko
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17d683446a242118689b49408d552169
https://doi.org/10.2139/ssrn.4168750
https://doi.org/10.2139/ssrn.4168750
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
The article describes promising directions of development of non-volatile resistive memory ReRAM. Silicon nitride is a promising resistive switching layer for memristors. In this work we conducted an experimental researches of the switching effect an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6222086e30dc5688e8faa1a1a288384
https://doi.org/10.29003/m1651.silicon-2020/364-368
https://doi.org/10.29003/m1651.silicon-2020/364-368
Autor:
Gennadiy Kamaev, Mikhail Efremov, Aleksandr Antonenko, Vladimir Volodin, Sofia Arzhannikova, Denis Marin, Andrey Gismatulin
Publikováno v:
Siberian Journal of Physics. 6:107-114
Multilayer structures with extra-thin SiO2 and hydrogenated amorphous silicon (a-Si: H) layers were created and investigated. Structures were obtained using cycles of deposition of the films α-Si: H and their subsequent partial oxidation in oxygen p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::802ce8b2915b4ed70746f785c94214fd
https://doi.org/10.54362/1818-7919-2011-6-4-107-114
https://doi.org/10.54362/1818-7919-2011-6-4-107-114