Zobrazeno 1 - 10 of 29 pro vyhledávání: '"Andrey Generalov"'
1
Geometrical magnetoresistance effect and mobility in graphene field-effect transistors
Autor: Isabel Harrysson Rodrigues, Andrey Generalov, Anamul Md Hoque, Miika Soikkeli, Anton Murros, Sanna Arpiainen, Andrei Vorobiev
Publikováno v: Harrysson Rodrigues, I, Generalov, A, Soikkeli, M, Murros, A, Arpiainen, S & Vorobiev, A 2022, ' Geometrical magnetoresistance effect and mobility in graphene field-effect transistors ', Applied Physics Letters, vol. 121, 013502 . https://doi.org/10.1063/5.0088564
Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in the GFETs ca
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee6224aa43c644debfeb2df0c09fd748
https://cris.vtt.fi/en/publications/d6d098dd-998b-4e68-82b1-2e10a9b58b8f
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3
Graphene Field-Effect Transistors With High Extrinsic ${f}_{T}$ and ${f}_{\mathrm{max}}$
Autor: Xinxin Yang, Daniel Neumaier, Jan Stake, Luca Banszerus, Christoph Stampfer, Marlene Bonmann, Andrey Generalov, Andrei Vorobiev, Muhammad Asad, Martin Otto
Publikováno v: IEEE Electron Device Letters. 40:131-134
In this letter, we report on the performance of graphene field-effect transistors (GFETs) in which the extrinsic transit frequency ( ${f}_{T}$ ) and maximum frequency of oscillation ( ${f}_{\text {max}}$ ) showed improved scaling behavior with respec
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2adf41a0913e9a1ac5cc3de70351825e
https://doi.org/10.1109/led.2018.2884054
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4
Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor
Autor: Lukas M. Eng, Stephan Winnerl, Andrei Vorobiev, Dovilė Čibiraitė, Marlene Bonmann, Florian Ludwig, Jan Stake, Andrey Generalov, Matthias M. Wiecha, Frederik Walla, Frederik Kuschewski, Hartmut G. Roskos, Amin Soltani, Susanne C. Kehr
Publikováno v: Light, Science & Applications
Light: Science & Applications, Vol 9, Iss 1, Pp 1-7 (2020)
Soltani, A, Kuschewski, F, Bonmann, M, Generalov, A, Vorobiev, A, Ludwig, F, Wiecha, M M, Čibiraitė, D, Walla, F, Winnerl, S, Kehr, S C, Eng, L M, Stake, J & Roskos, H G 2020, ' Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor ', Light: Science and Applications, vol. 9, no. 1, 97 . https://doi.org/10.1038/s41377-020-0321-0
Plasma waves play an important role in many solid-state phenomena and devices. They also become significant in electronic device structures as the operation frequencies of these devices increase. A prominent example is field-effect transistors (FETs)
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4bb1cdbabcfecb2a624000bdc4bcf8a
http://publikationen.ub.uni-frankfurt.de/files/54321/s41377-020-0321-0.zip
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6
Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?
Autor: Marlene Bonmann, Francisco Pasadas, Daniel Neumaier, Martin Otto, Jan Stake, David Jiménez, Xinxin Yang, P. C. Feijoo, Andrey Generalov, Andrei Vorobiev, Muhammad Asad, Christoph Stampfer, Luca Banszerus
Publikováno v: Nanoscale Advances
Nanoscale Advances (2516-0230)
Nanoscale advances 2(9), 4179-4186 (2020). doi:10.1039/C9NA00733D
Nanoscale Advances vol.2(2020)
It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numerically investigates whether velocity saturation can help to get better
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f7930ad25dcd4de3fc14133c5c30789
http://arxiv.org/abs/1910.08304
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7
Unveiling the plasma wave in the channel of graphene field-effect transistor
Autor: Dovile Cibiraite, Amin Soltani, Susanne C. Kehr, Jan Stake, Marlene Bonmann, Andrei Vorobiev, Frederik Kuschewski, Frederik Walla, Matthias M. Wiecha, Florian Ludwig, Andrey Generalov, Lukas M. Eng, Hartmut G. Roskos
Coupling an electromagnetic wave at GHz to THz frequencies into the channel of a graphene field-effect transistor (GFET) provokes collective charge carrier oscillations of the two-dimensional electron gas (2DEG) known as plasma waves. Here, we report
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8be945408402b111f6c0edc921ad632
https://aaltodoc.aalto.fi/handle/123456789/42247
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8
Design of a Dielectric Rod Waveguide Antenna Array for Millimeter Waves
Autor: Kerlos Atia Abdalmalak, Alejandro Garcia-Lamperez, Dmitri Lioubtchenko, Luis Enrique Garcia-Munoz, Andrey Generalov, Sergio Llorente-Romano, Alejandro Rivera-Lavado, Daniel Segovia-Vargas, Antti V. Räisänen
Publikováno v: Journal of Infrared, Millimeter, and Terahertz Waves. 38:33-46
In this manuscript, the use of dielectric rod waveguide (DRW) antennas in the millimeter and sub-millimeter wave range is presented as a solution for covering two issues: getting more radiated power and filling a technological gap problem in the tera
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7ed9c8148df024daf49df5fbd561a1bb
https://doi.org/10.1007/s10762-016-0310-9
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9
A 400-GHz Graphene FET Detector
Autor: Xinxin Yang, Jan Stake, Michael Andersson, Andrei Vorobiev, Andrey Generalov
Publikováno v: Generalov, A A, Andersson, M A, Yang, X, Vorobiev, A & Stake, J 2017, ' A 400-GHz Graphene FET Detector ', IEEE Transactions on Terahertz Science and Technology, vol. 7, no. 5, pp. 614-616 . https://doi.org/10.1109/TTHZ.2017.2722360
IEEE Transactions on Terahertz Science and Technology
This letter presents a graphene field effect transistor (GFET) detector at 400 GHz, with a maximum measured optical responsivity of 74 V/W, and a minimum noise-equivalent power of 130 pW/Hz 1/2. This letter shows how the detector performance degrades
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d2c7a86278ef407c50f05f1a081541b
https://cris.vtt.fi/en/publications/ee9a038c-91f2-4046-aeee-dc2624a0d3b0
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10
Extreme Asymmetry in Metasurfaces via Evanescent Fields Engineering: Angular-Asymmetric Absorption
Autor: Andrey Generalov, Xuchen Wang, Viktar Asadchy, Ana Díaz-Rubio, Juha Ala-Laurinaho, G. A. Ptitcyn, Sergei A. Tretyakov
Publikováno v: Physical review letters. 121(25)
On the quest towards full control over wave propagation, the development of compact devices that allow asymmetric response is a challenge. In this Letter, we introduce a new paradigm for the engineering of asymmetry in planar structures, revealing an
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbec027687adfba0852e9e6206454736
https://pubmed.ncbi.nlm.nih.gov/30608817
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