Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Andrey G. Petrov"'
Autor:
Andrey G. Petrov, Ivan I. Shvetsov-Shilovskiy, Sergey B. Shmakov, Anastasia V. Ulanova, Anna B. Boruzdina
Publikováno v:
Безопасность информационных технологий, Vol 29, Iss 2, Pp 100-111 (2022)
The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated.
Externí odkaz:
https://doaj.org/article/fd8fbafe5cf54f69b67c6260e0801268
Publikováno v:
Acta Biomedica Scientifica, Vol 4, Iss 1, Pp 66-71 (2019)
The study of the quality of life (QoL) in medicine is recognized worldwide, its scientific study is also recognized as a priority.Aim. To study the quality of life of workers in the Kuzbass coal industry, who are exposed to physical factors, as well
Externí odkaz:
https://doaj.org/article/a04369b207764ccbafeeecd8708fc79d
Autor:
V. D. Kalashnikov, Sergey B. Shmakov, Andrey G. Petrov, V. A. Chepov, I. I. Shvetsov-Shiovsky
Publikováno v:
2021 International Siberian Conference on Control and Communications (SIBCON).
The paper describes an automated system for monitoring the parameters of solid-state drives under the influence of ionizing radiation using National Instruments equipment and NI LabVIEW software. The paper presents a block diagram of a test bench dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::073a48b37c18bb662a8a3d8be393639c
https://doi.org/10.1109/sibcon50419.2021.9438860
https://doi.org/10.1109/sibcon50419.2021.9438860
Autor:
Andrey G. Petrov, Sergey B. Shmakov, Andrey V. Yanenko, A. A. Gracheva, I. I. Shvetsov-Shilovskiy
Publikováno v:
2021 International Siberian Conference on Control and Communications (SIBCON).
The paper presents an automated control system for leakage currents monitoring in memory ICs based on National Instruments PXI platform. One of the two standard low-level boards used in our laboratory has been modified with an intermediate board to m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73666867db3994f851646a593b007df4
https://doi.org/10.1109/sibcon50419.2021.9438909
https://doi.org/10.1109/sibcon50419.2021.9438909
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 31:131-140
In this work we investigate the influence of various memory chips supply voltage on their sensitivity to the radiation environment. The main physical mechanisms responsible for radiation-induced degradation at nominal, increased, and decreased supply
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ecc630962c566f335b15dc72ec34603
https://doi.org/10.2298/fuee1801131p
https://doi.org/10.2298/fuee1801131p
Autor:
Alexander S. Bakerenkov, Andrey G. Petrov, Viacheslav S. Pershenkov, V A Felitsyn, Dmitry V. Boychenko, Sergey B. Shmakov, V. A. Telets, Alexander S. Rodin
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
TID effects in 4 Mbit AT27 EPROM at different dose rates were investigated. The electrical characterization was performed at different power supply voltages to determine the correlation between a functional failure and corresponding parametric degrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::158a2590f12a2b31a00f8680d24f1d00
https://doi.org/10.1109/nsrec.2018.8584308
https://doi.org/10.1109/nsrec.2018.8584308
Autor:
Vladimir V. Emeliyanov, Anna B. Boruzdina, Gennady I. Zebrev, Andrey G. Petrov, A.V. Ulanova, Pavel S. Dolotov, Andrey A. Antonov, Maxim S. Gorbunov
Publikováno v:
IEEE Transactions on Nuclear Science. 61:1575-1582
Abstract — We study t he design of different 6T and DICE SRAM blocks based on a commercial 65 nm CMOS technology and discuss the experimental results for X - ray, proton and heavy ion irradiation campaigns. The results obtained show tha t the n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9522d1049ed8647a5a4b846facc5e89d
https://doi.org/10.1109/tns.2014.2319154
https://doi.org/10.1109/tns.2014.2319154
Autor:
L.N. Kessarinskiy, Alexander I. Chumakov, D. V. Bobrovsky, A.S. Tararaksin, Andrey G. Petrov, Dmitry V. Boychenko, Christian Chatry, Alexandre Rousset, A. O. Akhmetov
Publikováno v:
2016 IEEE Radiation Effects Data Workshop (REDW).
The paper presents new experimental results for single event effects (SEL, SEU, SET) in modern ICs obtained at "U-400M" heavy ion accelerator (JINR, Dubna, Russia) and UCL heavy ion accelerator (UCL university, Louvain-la-Neuve, Belgium). Five digita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30c78c790dffc91a9b481fade62c6c2d
https://doi.org/10.1109/nsrec.2016.7891720
https://doi.org/10.1109/nsrec.2016.7891720
Autor:
V. T. Punin, A. V. Kuzmin, Andrey G. Petrov, Alexander I. Chumakov, A. V. Kirgizova, A. Yu. Nikiforov, P. P. Kutsko, V. A. Telets, P. K. Skorobogatov, Aleksandr Borisov, V.S. Figurov
Publikováno v:
Russian Microelectronics. 38:2-16
Comparative experimental studies of the responses of typical representatives of integrated circuits (ICs) and semiconductor devices (SDs) with various designs to high-energy pulsed ionizing radiations from simulation facilities and laser simulators h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad707f6edf96d8334a8c537b2759bce6
https://doi.org/10.1134/s1063739709010028
https://doi.org/10.1134/s1063739709010028
Autor:
L. N. Kessarinskii, A. Y. Nikiforov, P. K. Skorobogatov, A. V. Kirgizova, Andrey G. Petrov, G. G. Davydov
Publikováno v:
Russian Microelectronics. 37:25-40
Device-and-process simulation of the response exhibited by SOS CMOS building blocks to pulsed ionizing irradiation is considered. Computer and laser simulations are conducted. For dose-rate effects, energetically optimal simulation wavelengths are fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::796ff5885aac366c1e1deceb4ce7b84d
https://doi.org/10.1134/s1063739708010046
https://doi.org/10.1134/s1063739708010046