Zobrazeno 1 - 10
of 146
pro vyhledávání: '"Andrey Bakin"'
Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
Autor:
Muhammad Fahlesa Fatahilah, Feng Yu, Klaas Strempel, Friedhard Römer, Dario Maradan, Matteo Meneghini, Andrey Bakin, Frank Hohls, Hans Werner Schumacher, Bernd Witzigmann, Andreas Waag, Hutomo Suryo Wasisto
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-11 (2019)
Abstract This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1–100) and diameters (i.e.,
Externí odkaz:
https://doaj.org/article/cb21572995a7431785e864b86686240e
Publikováno v:
Proceedings, Vol 1, Iss 4, p 290 (2017)
In this study, a ZnO nanorods (NRs) patterned MEMS piezoresistive silicon micro-cantilever was fabricated as environmental monitor. The fabrication starts from bulk silicon, utilizing photolithography, diffusion, inductively coupled plasma (ICP) cryo
Externí odkaz:
https://doaj.org/article/daed17fe652748a7ac73b1f4bb7c6557
Autor:
Selma Metzner, Bernd Kastner, Manuel Marschall, Gerd Wubbeler, Stefan Wundrack, Andrey Bakin, Arne Hoehl, Eckart Ruhl, Clemens Elster
Nano-Fourier transform infrared (FTIR) imaging is a powerful scanning-based technique at nanometer spatial resolution that combines FTIR spectroscopy and scattering-type scanning near-field optical microscopy (s-SNOM). Recording large spatial areas u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e3c1e5f7a2a9ef6721b2d91c3e1e8b1
Autor:
Thomas Bordignon, Manuel Fregolent, Carlo De Santi, Klaas Strempel, Andrey Bakin, Andreas Waag, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b8a9f97729545c51e21f7ee588d747f
https://doi.org/10.1109/wipda49284.2021.9645108
https://doi.org/10.1109/wipda49284.2021.9645108
Autor:
Thorsten Dziomba, Davood Momeni Pakdehi, Hans Werner Schumacher, Christoph Tegenkamp, Johannes Aprojanz, Andrey Bakin, Franz J. Ahlers, Rainer Stosch, Frank Hohls, Stefan Wundrack, Thi Thuy Nhung Nguyen, Klaus Pierz
Publikováno v:
ACS Applied Nano Materials. 2:844-852
In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::531d24f9cb2af5d3e7585c0e0a7e985d
https://doi.org/10.1021/acsanm.8b02093
https://doi.org/10.1021/acsanm.8b02093
Autor:
Klaus Pierz, A. Schmidt, D. Momeni, L. Michaliszyn, Hans Werner Schumacher, Hendrik Spende, N. Schmidt, W. Dempwolf, Stefan Wundrack, Andrey Bakin, Rainer Stosch
Publikováno v:
Physical Review Materials. 5
We demonstrate the fabrication of an ultra thin gallium film, also known as gallenene, beneath epitaxial graphene on 6H-SiC under ambient conditions triggered by liquid gallium intercalation. Gallenene has been fabricated using the liquid metal inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f61d6c57a145af5c25b2bf58521d1751
https://doi.org/10.1103/physrevmaterials.5.024006
https://doi.org/10.1103/physrevmaterials.5.024006
Autor:
Mattias Kruskopf, Rainer Stosch, Stefan Wundrack, Klaus Pierz, Davood Momeni Pakdehi, Hans Werner Schumacher, Andrey Bakin
Publikováno v:
Thin Solid Films. 659:7-15
We investigate the epitaxial growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The results clearly show that the key to controlling step bunching is the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2868f21cf3d02261bdbfd317f7664d1d
https://doi.org/10.1016/j.tsf.2018.05.025
https://doi.org/10.1016/j.tsf.2018.05.025
Autor:
Bernd Witzigmann, Muhammad Fahlesa Fatahilah, Andrey Bakin, Hans Werner Schumacher, Hao Zhou, Feng Yu, Klaas Strempel, Friedhard Römer, Hutomo Suryo Wasisto, Andreas Waag
Publikováno v:
IEEE Transactions on Electron Devices. 65:2439-2445
This paper reports on the normally off GaN vertical MOSFETs based on nanowires (NWs) with an inverted p-GaN channel and a wrap-around-gate structure for the first time. Both inductively coupled plasma dry reactive-ion etching and wet-chemical etching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b50750d175dfd7ca8585848fe63d59c2
https://doi.org/10.1109/ted.2018.2824985
https://doi.org/10.1109/ted.2018.2824985
Publikováno v:
NEMS
We present a novel approach for the functionalization of aluminum oxide (Al 2 O 3 ) coated solid-state nanopores. Silicon nitride nanopores fabricated by e-beam lithography and reactive ion etching were coated with Al 2 O 3 using atomic layer deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0becfdadaab89b96bf489d4c8108218b
https://doi.org/10.1109/nems.2019.8915589
https://doi.org/10.1109/nems.2019.8915589
Autor:
Klaus Pierz, Philip Schädlich, Florian Speck, Rainer Stosch, Stefan Wundrack, Thomas Seyller, Andrey Bakin, D. Momeni Pakdehi, Hans Werner Schumacher
Publikováno v:
Physical Review B. 99
The structural transition of a graphene buffer layer epitaxially grown on $6H$ silicon carbide (SiC) to quasifreestanding monolayer graphene by intercalation of oxygen and water molecules at low concentrations is studied by temperature-dependent Rama
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::832e98c57b40a6aae38addaa914fe906
https://doi.org/10.1103/physrevb.99.045443
https://doi.org/10.1103/physrevb.99.045443