Zobrazeno 1 - 10
of 237
pro vyhledávání: '"Andrey A. Nikolaev"'
Autor:
Anton R. Egorov, Omar M. Khubiev, Roman A. Golubev, Daria I. Semenkova, Andrey A. Nikolaev, Abel M. Maharramov, Gunay Z. Mammadova, Wanjun Liu, Alexander G. Tskhovrebov, Andreii S. Kritchenkov
Publikováno v:
Polymers, Vol 16, Iss 17, p 2509 (2024)
This work focuses on the first use of ultrasonic phenol-ene coupling as a polymer analogous transformation. The ultrasonic reaction was introduced into chitin chemistry, resulting in the fast and convenient preparation of new water-soluble cationic c
Externí odkaz:
https://doaj.org/article/f8cf7604496945d48d41d126b3e88113
Publikováno v:
Археология евразийских степей, Vol 6, Pp 158-170 (2023)
The paper presents the results of archaeological excavations within the residential area of the fortified posad of Tyumen. The earliest period of habitation in this area dates back to the XVII century. Two household structures, a cellar and an underg
Externí odkaz:
https://doaj.org/article/cd1b5db7cddc439da914e6bbc6c8b747
Publikováno v:
NeuroImage, Vol 266, Iss , Pp 119821- (2023)
The brain systems of episodic memory and oculomotor control are tightly linked, suggesting a crucial role of eye movements in memory. But little is known about the neural mechanisms of memory formation across eye movements in unrestricted viewing beh
Externí odkaz:
https://doaj.org/article/bc8232053884416a9dec348c6058f5ff
Autor:
Alexei V. Sakharov, Dmitri S. Arteev, Evgenii E. Zavarin, Andrey E. Nikolaev, Wsevolod V. Lundin, Nikita D. Prasolov, Maria A. Yagovkina, Andrey F. Tsatsulnikov, Sergey D. Fedotov, Evgenii M. Sokolov, Vladimir N. Statsenko
Publikováno v:
Materials, Vol 16, Iss 12, p 4265 (2023)
A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate m
Externí odkaz:
https://doaj.org/article/4d5c1f60bbad42e9893832605379ce86
Autor:
Daniele Barettin, Alexei V. Sakharov, Andrey F. Tsatsulnikov, Andrey E. Nikolaev, Alessandro Pecchia, Matthias Auf der Maur, Sergey Yu. Karpov, Nikolay Cherkashin
Publikováno v:
Nanomaterials, Vol 13, Iss 8, p 1367 (2023)
A possible solution for the realization of high-efficiency visible light-emitting diodes (LEDs) exploits InGaN-quantum-dot-based active regions. However, the role of local composition fluctuations inside the quantum dots and their effect of the devic
Externí odkaz:
https://doaj.org/article/a44fd4a473114c57a48122fa22b9e150
Autor:
Andrey V. Nikolaev
Publikováno v:
Север и рынок: формирование экономического порядка, Vol 24, Iss 2, Pp 20-34 (2021)
The article describes the key areas of strategic planning for the Arctic socio-economic development of the countries in the Northern Europe and Northern America from the point of two concepts: spatial organization of economy and sustainable regional
Externí odkaz:
https://doaj.org/article/6232c4ba0125417b9c7e0304f52ec27c
Autor:
Daniele Barettin, Alexei V. Sakharov, Andrey F. Tsatsulnikov, Andrey E. Nikolaev, Nikolay Cherkashin
Publikováno v:
Nanomaterials, Vol 13, Iss 2, p 241 (2023)
We exploit the three-dimensional (3D) character of the strain field created around InGaN islands formed within the multilayer structures spaced by a less than 1-nm-thick GaN layer for the creation of spatially correlated electronically coupled quantu
Externí odkaz:
https://doaj.org/article/c4b769827427462897179fb16cf7276c
Autor:
Mikhail R. Ainbund, Denis E. Mironov, Andrey V. Pashuk, Vasily I. Zubkov, Alexander V. Solomonov, Vladimir V. Zabrodskii, Andrey V. Nikolaev
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 22, Iss 5, Pp 80-92 (2019)
Introduction. In recent decades, in the field of photoelectronics, special attention has been paid to the development of semiconductor matrix photodetectors. These detectors have become an effective alternative to existing television receiving system
Externí odkaz:
https://doaj.org/article/34ee20abf7634020be01c6b5f311d663
Autor:
Dmitri S. Arteev, Alexei V. Sakharov, Wsevolod V. Lundin, Evgenii E. Zavarin, Andrey E. Nikolaev, Andrey F. Tsatsulnikov, Viktor M. Ustinov
Publikováno v:
Materials, Vol 15, Iss 24, p 8945 (2022)
The results of the study of the influence of Fe segregation into the unintentionally doped GaN channel layer in AlGaN/AlN/GaN heterostructures with Fe-doped GaN buffer layer on the electrical properties of two-dimensional electron gas are presented.
Externí odkaz:
https://doaj.org/article/18bb229a5b49456b9c924b601605ab01
Autor:
Anna Arkadievna Andreeva, Mohan Anand, Alexey I. Lobanov, Andrey Vladimirovich Nikolaev, Mikhail Aleksandrovich Panteleev
Publikováno v:
Computer Research and Modeling. 14:931-951