Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Andrew-tae Kim"'
Autor:
Timothy S. Cale, A. Jindal, Jongwon Seok, Andrew Tae Kim, Cyriaque P. Sukam, John A. Tichy, Ronald J. Gutmann
Publikováno v:
Microelectronic Engineering. 70:478-488
This paper describes a mechanical model for a representative dual axis rotational chemical mechanical planarization (CMP) tool. The model is three-dimensional, multiscale and includes sub-models for bulk pad deformation, asperity deformation, lubrica
Autor:
Young-Joon Moon, Tae-Young Jeong, Se-young Lee, Andrew-tae Kim, Hyun-Goo Jeon, Miji Lee, Boung-Ju Lee
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
We present both experimentally and numerically the effect of the line edge roughness (LER) of metal lines on breakdown characteristics of low-k interconnect dielectrics. Experimental results show that the LER-induced metal-to-metal space variation si
Autor:
Nae In Lee, Jung-Shik Heo, Kyoung-Woo Lee, Seung-Jin Lee, Jae-Hak Kim, Jae-ouk Choo, S. W. Nam, Hong Jae Shin, Seung Man Choi, Keeyoung Jun, Woon Hyuk Choi, Young Jin Wee, Andrew-tae Kim, Jae Yeol Maeng, Lee Jungeun
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
The root cause and an approach to lifetime expectation of bi-modal distribution in Cu/low-k interconnect have been elucidated through experimental and simulation results. The early mode with short failure time and voids at via bottom interface, could