Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Andrew Zai"'
Publikováno v:
2019 IEEE International Symposium on Phased Array System & Technology (PAST).
Analysis shows that multiple time-delayed power amplifiers can share a single envelope tracker and provide a significant improvement over statically supplied amplifiers. Phased arrays are a suitable application of this technique. Our analysis shows a
Autor:
Maxwell E. Plaut, Michael Lis, Andrew Zai, David J. Cipolle, John Russo, Theodore H. Fedynyshyn
Publikováno v:
ACS Applied Materials & Interfaces. 8:34019-34026
The creation of millimeter wave, 3D-printable dielectric nanocomposite is demonstrated. Alumina nanoparticles were combined with styrenic block copolymers and solvent to create shear thinning, viscoelastic inks that are printable at room temperature.
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 63:2953-2964
This paper introduces an efficient radar transmitter with improved spectral confinement, enabled by a pulse waveform that contains both amplitude and frequency modulation. The theoretical behavior of the Class-B power amplifier (PA) under a Gaussian
Autor:
Andrew Zai
Publikováno v:
IEEE Microwave Magazine. 20:29-29
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
This paper reviews various techniques that allow efficient amplification of amplitude-modulated radar pulses through some type of supply modulation. Examples at S and X-band with GaN PAs will be shown with efficiencies above 50% for 10-W transmitters
Publikováno v:
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
This paper describes the design and performance of an X-band GaN monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) in a 0.15 µm gate length GaN on SiC process. The measured output power is greater than 36dBm at peak PAE of
Publikováno v:
2014 IEEE MTT-S International Microwave Symposium (IMS2014).
This paper presents measurement results on supply-modulated X-band 0.15μm gate width GaN HEMT MMIC power amplifiers for OFDM signals. Two PAs at 10GHz with 4 and 10W output powers show peak CW efficiencies of 69% and 55%, with gains of 8.5 and 20.4
Publikováno v:
International Microwave Symposium
International Microwave Symposium, Jun 2013, Seattle, United States. pp.TU3F-1
International Microwave Symposium, Jun 2013, Seattle, United States. pp.TU3F-1
Static X-parameter (XP) models for RF power amplifiers (PAs), derived from both simulations and nonlinear vector network analyzer (NVNA) measurements, are investigated for the prediction of PA performance under dynamic signal conditions such as in en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8ba381a16aed0ac17949c8e5cad97c3
https://hal-unilim.archives-ouvertes.fr/hal-00918778
https://hal-unilim.archives-ouvertes.fr/hal-00918778
Publikováno v:
2013 IEEE 14th Workshop on Control and Modeling for Power Electronics (COMPEL).
This paper presents an envelope tracking supply modulator for a high efficiency radiofrequency power amplifier (RFPA). A wide bandwidth linear amplifier using a GaN high electron mobility transistor (HEMT) as a source follower output stage is describ
Autor:
Theodore H. Fedynyshyn, David J. Cipolle, Andrew Zai, Maxwell E. Plaut, Jennifer A. Lewis, Michael Lis, John Russo
Publikováno v:
Advanced Materials Technologies. 1:1600027