Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Andrew Venzie"'
Autor:
Andrew Venzie, Michael Stavola, W. Beall Fowler, Evan R. Glaser, Marko J. Tadjer, Jason I. Forbus, Mary Ellen Zvanut, Stephen J. Pearton
Publikováno v:
APL Materials, Vol 12, Iss 7, Pp 071108-071108-5 (2024)
Hydrogen in β-Ga2O3 passivates shallow impurities and deep-level defects and can have a strong effect on conductivity. More than a dozen O–D vibrational lines have been reported for β-Ga2O3 treated with the heavy isotope of hydrogen, deuterium. T
Externí odkaz:
https://doaj.org/article/e3a632e433be42ae9c24dd0bfab45a6a
Autor:
Andrew Venzie, Amanda Portoff, Michael Stavola, W. Beall Fowler, Jihyun Kim, Dae-Woo Jeon, Ji-Hyeon Park, Stephen J. Pearton
Publikováno v:
Applied Physics Letters. 120
α-Ga2O3 has the corundum structure analogous to that of α-Al2O3. The bandgap energy of α-Ga2O3 is 5.3 eV and is greater than that of β-Ga2O3, making the α-phase attractive for devices that benefit from its wider bandgap. The O–H and O–D cent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c44a30235d8379c84d38d8012e8d123a
https://doi.org/10.1063/5.0094707
https://doi.org/10.1063/5.0094707
Autor:
Fan Ren, W. Beall Fowler, Michael Stavola, Andrew Venzie, Stephen J. Pearton, Amanda Portoff, Chaker Fares
Publikováno v:
Applied Physics Letters. 119:062109
Si is an n-type dopant in Ga2O3 that can be intentionally or unintentionally introduced. The results of Secondary Ion Mass Spectrometry, Hall effect, and infrared absorption experiments show that the hydrogen plasma exposure of Si-doped Ga2O3 leads t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d8d787534203bf812e3e06161b7468b
https://doi.org/10.1063/5.0059769
https://doi.org/10.1063/5.0059769
Publikováno v:
Journal of Applied Physics. 127:055702
β-Ga2O3 is a promising ultrawide bandgap semiconductor for high power and extreme environment applications. The dominant O—H center in Ga2O3 has been assigned to a Ga(1) vacancy–2H (VGa(1)-2H) complex. An analysis of the polarization dependence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c7df1de1e1e5b5311c513ddee57970
https://doi.org/10.1063/1.5142376
https://doi.org/10.1063/1.5142376