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pro vyhledávání: '"Andrew Turansky"'
Autor:
Zhengmao Zhu, Teresa L. Pinto, Anita Madan, Paul Ronsheim, Judson R. Holt, Alexander Reznicek, Andrew Turansky, Michael Hatzistergos
Publikováno v:
Surface and Interface Analysis. 43:657-660
Systematic SIMS analyses with low-energy (250 eV ~1 keV) oxygen, cesium and krypton primary beams have been carried out on a set of fully strained uniform epitaxial Si 1-x Ge x films (x = 5 ~ 60%), as well as a germanium ion-implanted silicon standar
Autor:
Michael R. Saccomanno, Zhichun Zhang, Andrew Turansky, Chaunzhen Zhou, Marinus Hopstaken, Fred A. Stevie
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:03H103
Hydrogen is the most abundant element in the universe, but it cannot be detected by many analytical techniques. This element is used to improve interface quality and reduce the impact of defects in silicon technology. Knowledge of the amount and dist