Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Andrew T. Hunter"'
Autor:
Jacob Z. Blumoff, Andrew S. Pan, Tyler E. Keating, Reed W. Andrews, David W. Barnes, Teresa L. Brecht, Edward T. Croke, Larken E. Euliss, Jacob A. Fast, Clayton A.C. Jackson, Aaron M. Jones, Joseph Kerckhoff, Robert K. Lanza, Kate Raach, Bryan J. Thomas, Roland Velunta, Aaron J. Weinstein, Thaddeus D. Ladd, Kevin Eng, Matthew G. Borselli, Andrew T. Hunter, Matthew T. Rakher
Publikováno v:
PRX Quantum, Vol 3, Iss 1, p 010352 (2022)
We demonstrate rapid high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration (980-ns) and initialization (approximately 300-ns) operations are performed with all-electrical base
Externí odkaz:
https://doaj.org/article/bab5ef18724c408596be63e678c0c143
Autor:
Reed W. Andrews, Matthew T. Rakher, Matthew Borselli, Kevin H. Eng, Edward H. Chen, Aaron M. Jones, Seth Merkel, Lisa F. Edge, J. A. Wright, Andrey A. Kiselev, Richard S. Ross, L. A. De Lorenzo, J.Z. Blumoff, Seán M. Meenehan, Emily J. Pritchett, Andrew T. Hunter, Tyler E. Keating, Sieu D. Ha
Publikováno v:
Physical Review Applied. 12
Singlet-triplet spin states of a quantum dot support promising semiconductor-based qubits, yet often suffer from poor state preparation and measurement, due to low-lying excited states. Engineering a large energy splitting is impeded by the inability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc3b32fc9ab1b5c8e28058e943f884b
https://doi.org/10.1103/physrevapplied.12.014026
https://doi.org/10.1103/physrevapplied.12.014026
Autor:
Andrey A. Kiselev, Matthew Borselli, Thomas Hazard, Andrew T. Hunter, Marko Sokolich, Thaddeus D. Ladd, K.S. Holabird, Ivan Alvarado-Rodriguez, Brett M. Maune, Peter W. Deelman, Mark F. Gyure, Richard S. Ross, Biqin Huang, Adele E. Schmitz, Edward T. Croke
Publikováno v:
ECS Transactions. 50:823-829
Electrically defined silicon-based qubits are expected to show improved quantum memory characteristics in comparison with GaAs-based devices due to reduced hyperfine interactions with nuclear spins. Silicon-based qubit devices have proved more challe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a735de27e635d83f87f0777302539835
https://doi.org/10.1149/05009.0823ecst
https://doi.org/10.1149/05009.0823ecst
Autor:
Peter W. Deelman, Christopher A. Watson, Mark F. Gyure, Thaddeus D. Ladd, Adele E. Schmitz, Biqin Huang, Richard S. Ross, Andrey A. Kiselev, Brett M. Maune, Matthew Borselli, Marko Sokolich, Andrew T. Hunter, K.S. Holabird, Ivan Alvarado-Rodriguez
Publikováno v:
Nature. 481:344-347
Exploiting the weak interactions between electron spins and nuclear spins in silicon-based quantum dots leads to a dephasing time two orders of magnitude greater than in analogous gallium-arsenide-based devices, demonstrating the potential of silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd04e46d3a1b6753f17616e0663bfb90
https://doi.org/10.1038/nature10707
https://doi.org/10.1038/nature10707
Autor:
Andrey A. Kiselev, Adele E. Schmitz, K.S. Holabird, Peter W. Deelman, Mark F. Gyure, Matthew Borselli, Biqin Huang, Richard S. Ross, Thomas Hazard, Marko Sokolich, Leslie D. Warren, Kevin H. Eng, Andrew T. Hunter, Ivan Milosavljevic
Publikováno v:
Nanotechnology. 26(37)
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of individual q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b26b45c3f72e77ed3d135db8ec64f8e5
https://pubmed.ncbi.nlm.nih.gov/26302871
https://pubmed.ncbi.nlm.nih.gov/26302871
Autor:
J. A. Wright, Emily J. Pritchett, Michael P. Jura, Thaddeus D. Ladd, Kevin H. Eng, Brett M. Maune, Mark F. Gyure, Matthew Reed, Andrey A. Kiselev, Ivan Milosavljevic, Richard S. Ross, Seth Merkel, Andrew T. Hunter, Aaron Smith, Matthew T. Rakher, Adele E. Schmitz, Matthew Borselli, Reed W. Andrews
Publikováno v:
Physical review letters. 116(11)
We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the charge-state anti-cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::acb8a82a33581bdb8a2613f8c7259895
https://pubmed.ncbi.nlm.nih.gov/27035289
https://pubmed.ncbi.nlm.nih.gov/27035289
Autor:
K.S. Holabird, Kevin H. Eng, Aaron Smith, Peter W. Deelman, Mark F. Gyure, Bryan H. Fong, Ivan Milosavljevic, Andrey A. Kiselev, Thomas Hazard, Thaddeus D. Ladd, Matthew Borselli, Andrew T. Hunter, Biqin Huang, Adele E. Schmitz, Richard S. Ross
Publikováno v:
Science Advances
Three coupled quantum dots in isotopically purified silicon enable all-electrical qubit control with long coherence time.
Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control
Like modern microprocessors today, future processors of quantum information may be implemented using all-electrical control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4348c3111c36c97e4712116ba0775d6
https://pubmed.ncbi.nlm.nih.gov/26601186
https://pubmed.ncbi.nlm.nih.gov/26601186
Autor:
J. E. Jensen, T. J. de Lyon, Steven L. Bailey, M. D. Jack, Gregory L. Olson, Andrew T. Hunter, John A. Roth
Publikováno v:
Journal of Electronic Materials. 31:688-693
The application of spectroscopic ellipsometry (SE) for real-time composition determination during molecular beam epitaxy (MBE) growth of Hg1-xCdxTe alloys with x > 0.5 is reported. Techniques previously developed for SE determination of composition i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db29fc8f5e2b59ba1fce30d7d5513338
https://doi.org/10.1007/s11664-002-0220-6
https://doi.org/10.1007/s11664-002-0220-6
Autor:
J. E. Jensen, K. Kosai, Eli E. Gordon, M. D. Jack, W. B. Johnson, George R. Chapman, T. J. de Lyon, B. Walker, Bonnie A. Baumgratz, O. K. Wu, W. Larsen, B. Johs, Gregory L. Olson, M. Sen, Andrew T. Hunter
Publikováno v:
Journal of Crystal Growth. :980-984
Molecular-beam epitaxy (MBE) has been utilized to fabricate HgCdTe heterostructure separate absorption and multiplication avalanche photodiodes (SAM-APD) sensitive to infrared radiation in the 1.1-1.6 μm spectral range, as an alternative technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c24187ec7aac3130faf160e68183a400
https://doi.org/10.1016/s0022-0248(98)01506-1
https://doi.org/10.1016/s0022-0248(98)01506-1
Autor:
Matthew Borselli, Edward T. Croke, Kevin H. Eng, Ivan Alvarado-Rodriguez, Andrey A. Kiselev, Richard S. Ross, Adele E. Schmitz, Peter W. Deelman, Mark F. Gyure, Thomas Hazard, Brett M. Maune, Marko Sokolich, Biqin Huang, K.S. Holabird, Andrew T. Hunter
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f7ad838068222e4748d7d602de2b941
