Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Andrew S, Cavanagh"'
Autor:
Jonathan L. Partridge, Jessica A. Murdzek, Virginia L. Johnson, Andrew S. Cavanagh, Andreas Fischer, Thorsten Lill, Sandeep Sharma, Steven M. George
Publikováno v:
Chemistry of Materials. 35:2058-2068
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd1f3fdcac2187c1fba3a8c172248cc1
https://doi.org/10.1021/acs.chemmater.2c03616
https://doi.org/10.1021/acs.chemmater.2c03616
Autor:
Ann Lii-Rosales, Virginia L. Johnson, Andrew S. Cavanagh, Andreas Fischer, Thorsten Lill, Sandeep Sharma, Steven M. George
Publikováno v:
Chemistry of Materials. 34:8641-8653
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::025d85032f90d8bf00701a1bc6d2e78a
https://doi.org/10.1021/acs.chemmater.2c01603
https://doi.org/10.1021/acs.chemmater.2c01603
Publikováno v:
Chemistry of Materials. 33:7719-7730
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec8d87dcde38394778c9ccba1b2e5118
https://doi.org/10.1021/acs.chemmater.1c01950
https://doi.org/10.1021/acs.chemmater.1c01950
Publikováno v:
The Journal of Physical Chemistry C. 124:287-299
The thermal atomic layer etching (ALE) of Al2O3 can be achieved using sequential fluorination and ligand-exchange reactions. Although previous investigations have characterized the etch rates and s...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4863abad0ba619152f72f60faeb16d67
https://doi.org/10.1021/acs.jpcc.9b06104
https://doi.org/10.1021/acs.jpcc.9b06104
The thermal atomic layer etching (ALE) of germanium-rich SiGe was demonstrated using an oxidation and "conversion-etch" mechanism with oxygen (O-2) or ozone (O-3), hydrofluoric acid (HF), and trimethylaluminum [TMA, Al(CH3)(3)] as the reactants. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc7afec6473ca6c58e6999dc75cf2e3b
http://hdl.handle.net/10138/341853
http://hdl.handle.net/10138/341853
Electron-Enhanced Atomic Layer Deposition of Boron Nitride Thin Films at Room Temperature and 100 °C
Autor:
Jaclyn K, Sprenger, Huaxing, Sun, Andrew S, Cavanagh, Alexana, Roshko, Paul T, Blanchard, Steven M, George
Publikováno v:
J Phys Chem C Nanomater Interfaces
Electron-enhanced atomic layer deposition (EE-ALD) was used to deposit boron nitride (BN) thin films at room temperature and 100 °C using sequential exposures of borazine (B(3)N(3)H(6)) and electrons. Electron-stimulated desorption (ESD) of hydrogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2cc6281f056f163e90500bc8d24fd97b
https://pubmed.ncbi.nlm.nih.gov/33101567
https://pubmed.ncbi.nlm.nih.gov/33101567
Autor:
Matthias J. Young, Jeffrey W. Elam, Steven M. George, Bachir Aoun, Angel Yanguas-Gil, Andrew S. Cavanagh, Matthew W. Coile, Nicholas M. Bedford, Steven Letourneau, David J. Mandia
Publikováno v:
ACS applied materialsinterfaces. 12(20)
Atomic layer deposition (ALD) is a well-established technique for depositing nanoscale coatings with pristine control of film thickness and composition. The trimethylaluminum (TMA) and water (H2O) ALD chemistry is inarguably the most widely used and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61d746f3e72920db0814ec90441f1080
https://pubmed.ncbi.nlm.nih.gov/32309922
https://pubmed.ncbi.nlm.nih.gov/32309922
Electron-Enhanced Atomic Layer Deposition of Boron Nitride Thin Films at Room Temperature and 100 °C
Autor:
Paul T. Blanchard, Jaclyn K. Sprenger, Andrew S. Cavanagh, Huaxing Sun, Steven M. George, Alexana Roshko
Publikováno v:
The Journal of Physical Chemistry C. 122:9455-9464
Electron-enhanced atomic layer deposition (EE-ALD) was used to deposit boron nitride (BN) thin films at room temperature and 100 °C using sequential exposures of borazine (B3N3H6) and electrons. Electron-stimulated desorption (ESD) of hydrogen surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c75d79803a92028272d1fa7327a9d7c6
https://doi.org/10.1021/acs.jpcc.8b00796
https://doi.org/10.1021/acs.jpcc.8b00796
Publikováno v:
Journal of Vacuum Science & Technology A. 39:042403
The development of a hollow cathode plasma electron source (HC-PES) facilitated the rapid nucleation and low temperature deposition of thin cobalt films using electron-enhanced atomic layer deposition (EE-ALD). The Co EE-ALD was performed near room t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f3d6a6ba06624401b1412d51021e1c6
https://doi.org/10.1116/6.0001033
https://doi.org/10.1116/6.0001033
Autor:
Jessica A. Murdzek, Andrew S. Cavanagh, Younghee Lee, Jesus A. del Alamo, Wenjie Lu, Lisa Kong, Steven M. George, Jonas C. Gertsch
Publikováno v:
Nano letters. 19(8)
Thermal atomic layer etching (ALE) was demonstrated on ternary III-V compound semiconductors. In particular, thermal ALE on InGaAs and InAlAs was achieved with sequential, self-limiting fluorination and ligand-exchange reactions using hydrogen fluori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49e18a67deb0de57cb456f37faa788cc
https://pubmed.ncbi.nlm.nih.gov/31251069
https://pubmed.ncbi.nlm.nih.gov/31251069