Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Andrew R. J. Marshall"'
Autor:
Juanita Saroj James, Hiromi Fujita, Peter J. Carrington, Andrew R. J. Marshall, Susan Krier, Anthony Krier
Publikováno v:
Physics, Vol 6, Iss 3, Pp 990-998 (2024)
An approach to derive the below-bandgap absorption in GaSb/GaAs self-assembled quantum dot devices using room-temperature external quantum efficiency measurement results is presented. Devices with five layers of delta-doped quantum dots placed in the
Externí odkaz:
https://doaj.org/article/ba23d04308274dbda7f0d6c8237dfee4
Autor:
Ofogh Tizno, Andrew R. J. Marshall, Natalia Fernández-Delgado, Miriam Herrera, Sergio I. Molina, Manus Hayne
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
Abstract Whilst the different forms of conventional (charge-based) memories are well suited to their individual roles in computers and other electronic devices, flaws in their properties mean that intensive research into alternative, or emerging, mem
Externí odkaz:
https://doaj.org/article/e1895e19657b441f84dcc8ebcc023399
Autor:
Evangelia Delli, Peter D. Hodgson, Eva Repiso, Adam P. Craig, Jonathan P. Hayton, Qi Lu, Andrew R. J. Marshall, Anthony Krier, Peter J. Carrington
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 3, Pp 1-8 (2019)
Silicon photonics has emerged as the most promising technology for next-generation compact optoelectronic systems, but further development is still required to achieve efficient and reliable on-chip light sources. Direct epitaxial growth of antimonid
Externí odkaz:
https://doaj.org/article/c327a4345d264e4aa379a856008d3415
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XVIII.
Optical spectroscopic sensing is a technique that is commonly employed for the identification and compositional analysis of a wide variety of substances, from biological samples to greenhouse gases. High-resolution spectrometers are well established,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d048c9e5a9e2e55e8ba96be51d423aca
https://doi.org/10.1364/OE.444547
https://doi.org/10.1364/OE.444547
III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb–InAs strained layer superlattice, operation close to room temperature was demonstrated with cutoff wavele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d89188b7c222ee50092d71f0edacdb33
https://doi.org/10.1063/5.0051049
https://doi.org/10.1063/5.0051049
Autor:
Anthony Krier, Richard Beanland, Qi Lu, Denise Montesdeoca, Peter J. Carrington, Andrew R. J. Marshall
Publikováno v:
Solar Energy Materials and Solar Cells. 191:406-412
Thermophotovoltaic (TPV) devices based on GaInAsSb lattice matched to GaSb (100) substrates have demonstrated high external quantum efficiencies (EQEs) in the mid-infrared spectral range, making them promising candidates for waste heat recovery from
Autor:
Adam P. Craig, Peter J. Carrington, Evangelia Delli, E. Repiso, P. D. Hodgson, Andrew R. J. Marshall, Anthony Krier, Jonathan P. Hayton, Qi Lu
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 3, Pp 1-8 (2019)
Silicon photonics has emerged as the most promising technology for next-generation compact optoelectronic systems, but further development is still required to achieve efficient and reliable on-chip light sources. Direct epitaxial growth of antimonid
Autor:
Furat Al-Saymari, Andrew Bainbridge, Laura A. Hanks, Katarina Mamic, Adam P. Craig, Andrew R. J. Marshall
The design, fabrication and characterization of resonant cavity enhanced photodiodes for the short-wave infrared has been investigated. An InGaAsSb absorber and AlGaSb barrier were used in an nBn structure, within a Fabry-Perot cavity bounded by AlAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88c50e7bc749b03647775cff87b30b29
https://doi.org/10.1109/LPT.2020.3025977
https://doi.org/10.1109/LPT.2020.3025977
Autor:
Andrew R. J. Marshall, Anthony Krier, Jonathan P. Hayton, Matthew Bentley, Richard Beanland, Evangelia Delli, Veronica Letka, E. Repiso, Qi Lu, P. D. Hodgson, Peter J. Carrington, Adam P. Craig
Publikováno v:
Infrared Sensors, Devices, and Applications X.
GaSb-based materials can be used to produce high performance photonic devices operating in the technologically important mid-infrared spectral range. Direct epitaxial growth of GaSb on silicon (Si) is an attractive method to reduce manufacturing cost