Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Andrew N. Lemmon"'
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 1182-1196 (2024)
Current conducted emissions standards provide considerable flexibility in the handling of interface converters, which are of increasing importance for the design and implementation of microgrids. Of particular interest herein is the approach selected
Externí odkaz:
https://doaj.org/article/f646afa465db41f6a7308f67469935c2
Autor:
Blake W. Nelson, Andrew N. Lemmon, Sergio J. Jimenez, H. Alan Mantooth, Brian T. DeBoi, Christopher D. New, Md Maksudul Hossain
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 2, Pp 106-123 (2021)
Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Transistor models presented for SPICE are often evaluated by accuracy, with less consideration for the computational cost
Externí odkaz:
https://doaj.org/article/0bdd76da4bdb4d0fbb338998f7086ab5
Autor:
Blake W. Nelson, Andrew N. Lemmon, Brian T. DeBoi, Md Maksudul Hossain, H. Alan Mantooth, Christopher D. New, Jared C. Helton
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 1, Pp 499-512 (2020)
Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead
Externí odkaz:
https://doaj.org/article/2ac63d65e626426c965920f659654420
Publikováno v:
IEEE Transactions on Power Electronics. 38:4647-4657
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcb3d89a6c3372565c5c8d953a09f93e
https://doi.org/10.1109/tpel.2022.3225756
https://doi.org/10.1109/tpel.2022.3225756
Publikováno v:
IEEE Transactions on Power Electronics. 37:12415-12425
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::554486dbbe82b170645ebf5d6b15c4f5
https://doi.org/10.1109/tpel.2022.3176981
https://doi.org/10.1109/tpel.2022.3176981
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4db547413ba5077dfed1c1d85b1a5e73
https://doi.org/10.1109/apec43580.2023.10131165
https://doi.org/10.1109/apec43580.2023.10131165
Autor:
Andrew N. Lemmon, Brian T. DeBoi
Publikováno v:
2022 IEEE International Workshop on Integrated Power Packaging (IWIPP).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b45469efcd7695e3a72e1a9e386df371
https://doi.org/10.1109/iwipp50752.2022.9894210
https://doi.org/10.1109/iwipp50752.2022.9894210
Publikováno v:
IEEE Transactions on Power Electronics. 35:13400-13408
The accelerating commercialization of wide bandgap technology has led to increased demand for accurate characterization of parasitic impedances within packaging structures such as multichip power modules. However, the accuracy of known methods is not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53a4aec060e3abe7660aeb9cce997a6b
https://doi.org/10.1109/tpel.2020.2992332
https://doi.org/10.1109/tpel.2020.2992332
Autor:
Andrew J. Sellers, Raghav Khanna, Ali Shahabi, Michael R. Hontz, Andrew N. Lemmon, Brian T. DeBoi
Publikováno v:
IEEE Transactions on Power Electronics. 35:12252-12263
This article presents an automated procedure for developing wide bandgap semiconductor device models capable of capturing high-frequency effects in applications relevant to next generation power electronics. A derivative-free global optimization algo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b111ec1b81c6ffd1bd034ce8b796395
https://doi.org/10.1109/tpel.2020.2986928
https://doi.org/10.1109/tpel.2020.2986928
Publikováno v:
IEEE Transactions on Power Electronics. 35:8034-8049
Modern power converters designed with wide band-gap (WBG) semiconductors are known to generate substantial conducted electromagnetic interference (EMI) as a side effect of high-edge-rate and high-frequency switching. This article provides a consolida
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19b389e3d31d250e63f92613f43c7160
https://doi.org/10.1109/tpel.2019.2963883
https://doi.org/10.1109/tpel.2019.2963883