Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Andrew M. Wowchak"'
Autor:
M. Kossler, Dennis E. Walker, M. Trejo, A. M. Dabiran, Steve Tetlak, James K. Gillespie, Peter Chow, Kelson D. Chabak, Antonio Crespo, Glen D. Via, Robert C. Fitch, Andrew M. Wowchak
Publikováno v:
International Journal of High Speed Electronics and Systems. 20:385-392
This paper presents high performance device results using an ultra-thin AlN / GaN structure on sapphire substrate with a 100-nm T -gate. Excellent dc and RF characteristics are reported, including an extrinsic transconductance of 500 mS/mm and an ext
Autor:
Chih-Yang Chang, Peter Chow, Amir M. Dabiran, Chien-Fong Lo, Fan Ren, Stephen J. Pearton, Andrew M. Wowchak, B. Cui, Ivan I. Kravchenko
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:52-55
Ozone treatment of AlN on AlN∕GaN heterostructures produces effective surface passivation and chemical resistance to the AZ positive photoresist developer used for subsequent device fabrication. The ozone-passivated AlN∕GaN high electron mobility
Autor:
Robert C. Fitch, S. K. Tetlak, David J. Smith, James K. Gillespie, Michael R. Johnson, M. Trejo, A. M. Dabiran, M. Kossler, Dennis E. Walker, Andrew M. Wowchak, Kelson D. Chabak, Antonio Crespo
Publikováno v:
IEEE Electron Device Letters. 32:1677-1679
This letter presents transistor device results on ultrathin AIN/GaN high-electron mobility transistors grown on a sapphire substrate with high dc/RF performance, including low gate leakage and high transconductance. Devices with 80and 180-nm T-gates
Autor:
Byung Hwan Chu, Andrew M. Wowchak, P. Rajagopal, Yu-Lin Wang, Stephen J. Pearton, Fan Ren, Edwin L. Piner, B. Cui, Amir M. Dabiran, Peter Chow, Jerry W. Johnson, Jenshan Lin, Chih-Yang Chang, K. J. Linthicum, John C. Roberts, Nancy D. Denslow, Kevin J. Kroll
Publikováno v:
physica status solidi c. 8:2486-2488
Real time detection of vitellogenin in largemouth bass serum was demonstrated using AlGaN/GaN HEMTs. Anti-vitellogenin antibodies were chemically anchored to the gold-coated gate area of the HEMT by thioglycolic acid. The potential difference that oc
Publikováno v:
Journal of Applied Physics. 88:5821-5826
Highly resistive molecular beam epitaxial GaN layers are characterized by temperature dependent conductivity and Hall effect measurements. Seven n-type GaN samples with room temperature layer resistivity ranging between 8 and 4.2×106 Ω cm are used
Publikováno v:
Journal of Applied Physics. 88:3463-3469
Standard variable angle spectroscopic ellipsometry (VASE) has been employed to study the ordinary optical dielectric response of hexagonal gallium nitride (GaN) thin films—an important material for blue and ultraviolet light emitting device applica
Autor:
D.J King, Stephen J. Pearton, G. T. Dang, J. J. Klaassen, Peter Chow, C Monier, Fan Ren, A. P. Zhang, Andrew M. Wowchak, C. J. Polley, Xian-An Cao, J. M. Van Hove
Publikováno v:
Solid-State Electronics. 44:1261-1265
The dc characteristics of pnp GaN/AlGaN heterojunction bipolar transistors are simulated using a quasi-3D-model. The effects of base doping and thickness, contact geometry and device operating temperature on dc current gain have been examined. Maximu
Autor:
R. Dietrich, A. Wieszt, Peter Chow, Andrei Vescan, Helmut Leier, Andrew M. Wowchak, H. Tobler, J.M. Van Hove
Publikováno v:
Journal of Crystal Growth. :327-331
We report on the performance of AlGaN/GaN MODFETs grown by MBE. A record value of 410 V maximum drain voltage was measured for devices with current densities of 200 mA/mm. From the dependence of breakdown voltage with gate-drain separation a breakdow
Autor:
Andrew M. Wowchak, J. E. Borton, J. M. Van Hove, A. K. Fung, Peter Chow, M. I. Nathan, R. Hickman
Publikováno v:
Journal of Electronic Materials. 28:572-579
We study the electrical characteristics (current vs voltage, I/V) of Co, In, Mg, Mn, Ni, and Zn each with an Au overlayer to determine their usefulness as ohmic contact metals to p-type GaN. For all the metals, none of the I/V relationships are compl
Autor:
M. F. Rosamond, J. M. Van Hove, Andrew M. Wowchak, C. J. Polley, R. Hickman, Peter Chow, Jody J. Klaassen
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4:805-810
Gallium nitride wafer epitaxy on large diameter substrates is critical for the future fabrication of large area UV linear or 2D imaging arrays, as well as for the economical production of other GaN-based devices. Typical group III-nitride deposition