Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Andrew M. Wowchak"'
Autor:
M. Kossler, Dennis E. Walker, M. Trejo, A. M. Dabiran, Steve Tetlak, James K. Gillespie, Peter Chow, Kelson D. Chabak, Antonio Crespo, Glen D. Via, Robert C. Fitch, Andrew M. Wowchak
Publikováno v:
International Journal of High Speed Electronics and Systems. 20:385-392
This paper presents high performance device results using an ultra-thin AlN / GaN structure on sapphire substrate with a 100-nm T -gate. Excellent dc and RF characteristics are reported, including an extrinsic transconductance of 500 mS/mm and an ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b76fe4ecca04c895a8457d41980c1384
https://doi.org/10.1142/s0129156411006660
https://doi.org/10.1142/s0129156411006660
Autor:
Chih-Yang Chang, Peter Chow, Amir M. Dabiran, Chien-Fong Lo, Fan Ren, Stephen J. Pearton, Andrew M. Wowchak, B. Cui, Ivan I. Kravchenko
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:52-55
Ozone treatment of AlN on AlN∕GaN heterostructures produces effective surface passivation and chemical resistance to the AZ positive photoresist developer used for subsequent device fabrication. The ozone-passivated AlN∕GaN high electron mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e9bddeac20b1fb2bb61255765a9ded1
https://doi.org/10.1116/1.3271333
https://doi.org/10.1116/1.3271333
Autor:
Robert C. Fitch, S. K. Tetlak, David J. Smith, James K. Gillespie, Michael R. Johnson, M. Trejo, A. M. Dabiran, M. Kossler, Dennis E. Walker, Andrew M. Wowchak, Kelson D. Chabak, Antonio Crespo
Publikováno v:
IEEE Electron Device Letters. 32:1677-1679
This letter presents transistor device results on ultrathin AIN/GaN high-electron mobility transistors grown on a sapphire substrate with high dc/RF performance, including low gate leakage and high transconductance. Devices with 80and 180-nm T-gates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d2a6ced359171a7cd2bd82a302701cf
https://doi.org/10.1109/led.2011.2167952
https://doi.org/10.1109/led.2011.2167952
Autor:
Byung Hwan Chu, Andrew M. Wowchak, P. Rajagopal, Yu-Lin Wang, Stephen J. Pearton, Fan Ren, Edwin L. Piner, B. Cui, Amir M. Dabiran, Peter Chow, Jerry W. Johnson, Jenshan Lin, Chih-Yang Chang, K. J. Linthicum, John C. Roberts, Nancy D. Denslow, Kevin J. Kroll
Publikováno v:
physica status solidi c. 8:2486-2488
Real time detection of vitellogenin in largemouth bass serum was demonstrated using AlGaN/GaN HEMTs. Anti-vitellogenin antibodies were chemically anchored to the gold-coated gate area of the HEMT by thioglycolic acid. The potential difference that oc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c16e4f3d5cc88f53dace6e285efa5f7d
https://doi.org/10.1002/pssc.201001171
https://doi.org/10.1002/pssc.201001171
Publikováno v:
Journal of Applied Physics. 88:5821-5826
Highly resistive molecular beam epitaxial GaN layers are characterized by temperature dependent conductivity and Hall effect measurements. Seven n-type GaN samples with room temperature layer resistivity ranging between 8 and 4.2×106 Ω cm are used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d33956ec04eb7725d0c3271cc63a4b4
https://doi.org/10.1063/1.1319966
https://doi.org/10.1063/1.1319966
Publikováno v:
Journal of Applied Physics. 88:3463-3469
Standard variable angle spectroscopic ellipsometry (VASE) has been employed to study the ordinary optical dielectric response of hexagonal gallium nitride (GaN) thin films—an important material for blue and ultraviolet light emitting device applica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::380497aea7d6f0bbb2bc8a502298aabc
https://doi.org/10.1063/1.1289224
https://doi.org/10.1063/1.1289224
Autor:
Andrew M. Wowchak, J. E. Borton, J. M. Van Hove, A. K. Fung, Peter Chow, M. I. Nathan, R. Hickman
Publikováno v:
Journal of Electronic Materials. 28:572-579
We study the electrical characteristics (current vs voltage, I/V) of Co, In, Mg, Mn, Ni, and Zn each with an Au overlayer to determine their usefulness as ohmic contact metals to p-type GaN. For all the metals, none of the I/V relationships are compl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9d522d69d34920e8f442168adfd79bd
https://doi.org/10.1007/s11664-999-0115-x
https://doi.org/10.1007/s11664-999-0115-x
Autor:
M. F. Rosamond, J. M. Van Hove, Andrew M. Wowchak, C. J. Polley, R. Hickman, Peter Chow, Jody J. Klaassen
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4:805-810
Gallium nitride wafer epitaxy on large diameter substrates is critical for the future fabrication of large area UV linear or 2D imaging arrays, as well as for the economical production of other GaN-based devices. Typical group III-nitride deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8565ee8b1bc25b565b184d1f0c497e10
https://doi.org/10.1557/s1092578300003458
https://doi.org/10.1557/s1092578300003458
Autor:
A.J. SpringThorpe, P. Fisher, Andrew M. Wowchak, J. J. Klaassen, Keith R. Evans, J.M. Van Hove, Peter Chow
Publikováno v:
Journal of Crystal Growth. :61-65
A linear motion Ga source has been constructed and tested for smooth flux variation. The beam flux can be monitored by sensors such as atomic absorption, RHEED, and pyrometric interferometry. We demonstrated stable and reproducible operation of the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9a1bafb351a2842a7c2c78bab25c512
https://doi.org/10.1016/s0022-0248(96)00872-x
https://doi.org/10.1016/s0022-0248(96)00872-x
Publikováno v:
Journal of Crystal Growth. :79-83
In-situ cathodoluminescence (CL) is presented as a technique for determining film composition, optical quality, doping levels, and temperature of MBE grown group III nitride films. Excitation of the films is done with either the Auger or RHEED electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ae303e8fa86cc3d8c1c7d8f72278b7b
https://doi.org/10.1016/s0022-0248(97)00869-5
https://doi.org/10.1016/s0022-0248(97)00869-5