Zobrazeno 1 - 10
of 138
pro vyhledávání: '"Andrew M. Armstrong"'
Autor:
Andrew M. Armstrong, Andrew A. Allerman, Greg W. Pickrell, Mary H. Crawford, Caleb E. Glaser, Trevor Smith
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 318-323 (2021)
Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 μA/cm2 at 1250 V), excellent forward characteristics (ideality factor 1.6), and low specific on-resistance (1.1 mΩ.cm2) were realized
Externí odkaz:
https://doaj.org/article/8ef17d39cb45411983348f962825013f
Autor:
Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 444-452 (2019)
AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation. Al0.85
Externí odkaz:
https://doaj.org/article/6d1b3698d9d3405d8da45f9aff91a965
Autor:
Luke Yates, Brendan P. Gunning, Mary H. Crawford, Jeffrey Steinfeldt, Michael L. Smith, Vincent M. Abate, Jeramy R. Dickerson, Andrew M. Armstrong, Andrew Binder, Andrew A. Allerman, Robert J. Kaplar
Publikováno v:
IEEE Transactions on Electron Devices. 69:1931-1937
Autor:
Jung Han, Kai Fu, Andrew M. Armstrong, Hong Chen, Chen Yang, Andrew A. Allerman, Hanxiao Liu, Xuguang Deng, Shanthan Reddy Alugubelli, Tae Hyeon Kim, Houqiang Fu, Fernando Ponce, Prudhvi Peri, David J. Smith, Edward T. Yu, Po Yi Su, Daniel C. Messina, Jingan Zhou, Chi-Yin Cheng, Xuanqi Huang, Robert J. Nemanich, Stephen M. Goodnick, Dinusha Herath Mudiyanselage, Kevin Hatch, Yuji Zhao, Tsung-Han Yang, Bingjun Li, Reza Vatan Meidanshahi
Publikováno v:
Materials Today. 49:296-323
This paper reviews materials challenges and recent progress for selective area regrowth and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize randomly placed, reliable, contactable, and generally useable laterally pat
Autor:
Andrew M. Armstrong, Andrew A. Allerman, Sanyam Bajaj, David R. Daughton, Siddharth Rajan, Shahadat H. Sohel, Alexander M. Potts, Towhidur Razzak
Publikováno v:
IEEE Transactions on Electron Devices. 68:4278-4282
Ultrawide bandgap Al0.7Ga0.3N MESFETs with refractory Tungsten Schottky and Ohmic contacts are studied in 300–675 K environments. Variable-temperature dc electrical transport reveals large ON-state drain current densities for an AlGaN device: 209 m
Autor:
Mary H. Crawford, A. Alec Talin, Andrew A. Allerman, François Léonard, Andrew M. Armstrong, Greg Pickrell, K. C. Celio
Publikováno v:
IEEE Electron Device Letters. 42:1041-1044
Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical paramete
Autor:
Eric R. Heller, Asegun Henry, Andrew A. Allerman, Alexej Pogrebnyakov, Venkatraman Gopalan, Disha Talreja, Yiwen Song, Daniel Shoemaker, Hamid Reza Seyf, Joan M. Redwing, Sukwon Choi, Bikramjit Chatterjee, James Spencer Lundh, Robert Kaplar, Christopher B. Saltonstall, Albert G. Baca, Thomas E. Beechem, Andrew M. Armstrong, Brian M. Foley, Brianna Klein, Anushka Bansal
Publikováno v:
IEEE Electron Device Letters. 41:461-464
Aluminum gallium nitride (AlGaN) high electron mobility transistors (HEMTs) are candidates for next-generation power conversion and radio frequency (RF) applications. AlxGa1-xN channel HEMT devices (x = 0.3, x = 0.7) were investigated using multiple
Publikováno v:
ACS applied materialsinterfaces.
The ability to form pristine interfaces after etching and regrowth of GaN is a prerequisite for epitaxial selective area doping, which in turn is needed for the formation of lateral PN junctions and advanced device architectures. In this work, we rep
Autor:
A. A. Allerman, Vincent M. Abate, T. Smith, Andrew M. Armstrong, G.P. Pickrell, C. E. Glaser, Mary H. Crawford
Publikováno v:
Electronics Letters. 56:207-209
GaN p-n diodes were formed by selective area regrowth on freestanding GaN substrates using a dry etch, followed by post-etch surface treatment to reduce etch-induced defects, and subsequent regrowth into wells. Etched-and-regrown diodes with a 150 μ
Autor:
Andrew M. Armstrong, Mary H. Crawford, A. A. Allerman, Vincent M. Abate, Karen Charlene Cross, Greg Pickrell, C. E. Glaser
Publikováno v:
Journal of Electronic Materials. 48:3311-3316
Vertical c-plane GaN p–n diodes, where the p-GaN layer is formed by epitaxial regrowth using metal–organic chemical-vapor deposition, are reported. Current–voltage (I–V) performance similar to continuously grown p–n diodes is demonstrated,