Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Andrew J. Trunek"'
Publikováno v:
Earth and Space 2021.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::364349365b107b1ab0b22f1b1467e4c9
https://doi.org/10.1061/9780784483374.056
https://doi.org/10.1061/9780784483374.056
Publikováno v:
Earth and Space 2018.
To demonstrate proof of concept water extraction from simulated Martian regolith, an open reactor design is presented along with experimental results. The open reactor concept avoids sealing surfaces and complex moving parts. In an abrasive environme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6a9b0c1f1c8a322070f6f843c4a4458
https://doi.org/10.1061/9780784481899.047
https://doi.org/10.1061/9780784481899.047
Autor:
Kim Kisslinger, Yu Yang, Philip G. Neudeck, Andrew J. Trunek, Andrew A. Woodworth, Michael Dudley, David J. Spry, Ouloide Yannick Goue, Balaji Raghothamachar, Jianqiu Guo
Publikováno v:
Journal of Electronic Materials. 45:2078-2086
Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f143752c526ec8d06c088b500e5cd9e8
https://doi.org/10.1007/s11664-015-4185-7
https://doi.org/10.1007/s11664-015-4185-7
Autor:
Philip G. Neudeck, Andrew A. Woodworth, Michael Dudley, Balaji Raghothamachar, Andrew J. Trunek, J. A. Powell, David J. Spry
Publikováno v:
Materials Science Forum. :33-36
Lateral expansion of small mixed polytype 4H/6H-SiC and 6H-SiC slivers were realized by hot wall chemical vapor deposition (HWCVD). Small slivers cut from m-oriented (11 ̅00) SiC boule slices containing regions of 4H and 6H-SiC or just single polyty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f58cd5b8d56c06c621fdec369614bbd8
https://doi.org/10.4028/www.scientific.net/msf.717-720.33
https://doi.org/10.4028/www.scientific.net/msf.717-720.33
Publikováno v:
Journal of Crystal Growth. 347:45-48
Transmission electron microscopy and atomic force microscopy were used to study the origin of a preferred nucleation site on the atomically flat 3C-SiC mesas leading to the formation of tetrahedral hillocks. The hillocks exhibit a “wedding cake”
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbab196a4a92ab33056e5fea16dc4790
https://doi.org/10.1016/j.jcrysgro.2012.03.014
https://doi.org/10.1016/j.jcrysgro.2012.03.014
Autor:
Ali Sayir, J. Anthony Powell, David J. Spry, Andrew J. Trunek, Philip G. Neudeck, Andrew A. Woodworth
Publikováno v:
Materials Science Forum. :49-52
In an effort to grow single crystal SiC fibers for seed crystals the following two growth methods have been coupled in this work: traveling solvent and laser heated floating zone to create the solvent-laser heated floating zone (Solvent-LHFZ) crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d16c8a835302faa5fae0edbc1b1ce325
https://doi.org/10.4028/www.scientific.net/msf.717-720.49
https://doi.org/10.4028/www.scientific.net/msf.717-720.49
Autor:
Michael A. Mastro, J. A. Powell, Mark E. Twigg, C. R. Eddy, Andrew J. Trunek, Philip G. Neudeck, Yoosuf N. Picard, Joshua D. Caldwell, Ronald T. Holm
Publikováno v:
Journal of Electronic Materials. 39:743-746
Forescattered electron channeling contrast imaging (ECCI) offers the potential for imaging and analyzing extended defects in a scanning electron microscope (SEM). Indeed, it is shown that ECCI is able to determine the Burgers vector of threading disl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c58c19bab9073377c416f8efbf6e8bc7
https://doi.org/10.1007/s11664-010-1143-2
https://doi.org/10.1007/s11664-010-1143-2
Publikováno v:
Materials Science Forum. :593-596
We report on new observations made, when 4H-SiC, Si-face substrate mesas, having either low tilt-angle (< 1°) with steps or step-free top surfaces, were exposed to three separate HCl etching conditions for five minutes at temperatures of 1130°C, 12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae355e23c9521f7d3478c06d8a606487
https://doi.org/10.4028/www.scientific.net/msf.615-617.593
https://doi.org/10.4028/www.scientific.net/msf.615-617.593
Autor:
Liang-Yu Chen, Philip G. Neudeck, Laura J. Evans, Drago Androjna, Andrew J. Trunek, David J. Spry, Gary W. Hunter
Publikováno v:
Materials Science Forum. :1199-1202
This paper reports on initial results from the first device tested of a “second generation” Pt-SiC Schottky diode hydrogen gas sensor that: 1) resides on the top of atomically flat 4H-SiC webbed cantilevers, 2) has integrated heater resistor, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::883b97f136d55a08793333e7f6fdc6b9
https://doi.org/10.4028/www.scientific.net/msf.600-603.1199
https://doi.org/10.4028/www.scientific.net/msf.600-603.1199
Publikováno v:
Journal of Crystal Growth. 310:1794-1798
We report on a recently-observed difference in nitrogen doping during the growth of homoepitaxial films grown on on-axis 4H-SiC (SiC—silicon carbide) substrates patterned with arrays of mesas. In particular, the doping of webbed cantilevered region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50bedf1ac341e450e540ccab730f87e3
https://doi.org/10.1016/j.jcrysgro.2007.11.029
https://doi.org/10.1016/j.jcrysgro.2007.11.029