Výsledky vyhledávání - "Andrew J. Stoltz"

Defects and the Formation of Impurity ‘Hot Spots’ in HgCdTe/CdZnTe

Autor: Scott M. Johnson, R. N. Jacobs, Jeffrey M. Peterson, L. O. Bubulac, J. M. Arias, D. D. Lofgreen, J. W. Bangs, Andrew J. Stoltz, L. A. Almeida, M. Reddy, J. D. Benson, A. Wang

Publikováno v: Journal of Electronic Materials. 48:6194-6202

The formation of impurity ‘hot spot’ macro-defects—localized high impurity level contaminates—is examined. The evolution of macro-defects through their critical stages: as-received CdZnTe substrate, molecular beam epitaxy (MBE) prep etch, Te/

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8073844a46259cb686a3c32aec6a92bf
https://doi.org/10.1007/s11664-019-07408-y

Zobrazit plný text záznamu

In Situ Band-Edge Monitoring of Cd1−yZnyTe Substrates for Molecular Beam Epitaxy of HgCdTe

Autor: L. A. Almeida, B. Pinkie, B. Wissman, Alexander Brown, R. N. Jacobs, Andrew J. Stoltz, J. D. Benson, J. Arias

Publikováno v: Journal of Electronic Materials. 48:6138-6144

We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area Cd1−yZnyTe(211)B substrates up to and exceeding 8 × 8 cm2 brings new challenges from the perspective of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f23e68198dc610e9b2ef17511db5f7dd
https://doi.org/10.1007/s11664-019-07354-9

Zobrazit plný text záznamu

Impurity ‘Hot Spots’ in MBE HgCdTe/CdZnTe

Autor: Andrew J. Stoltz, A. Yulius, L. A. Almeida, L. O. Bubulac, Jeffrey M. Peterson, Scott M. Johnson, M. Carmody, M. Jaime-Vasquez, P. J. Smith, A. Wang, J. D. Benson, M. Reddy, R. N. Jacobs, D. D. Lofgreen, J. M. Arias, J. W. Bangs, Priyalal Wijewarnasuriya

Publikováno v: Journal of Electronic Materials. 47:5671-5679

In this work, impurity ‘hot spot’ macro-defects—high impurity level macro-defect contaminates were examined. ‘Hot spots’ have very high localized concentrations of: K, Mg, Ni, Cr, Mn, Ca, Al, Na, Fe, and Cu. For example, these ‘hot spot�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fd8a93b6c38c8f702ad39a7e43e91987
https://doi.org/10.1007/s11664-018-6523-z

Zobrazit plný text záznamu

Impact of CdZnTe Substrates on MBE HgCdTe Deposition

Autor: D. D. Lofgreen, Priyalal Wijewarnasuriya, Scott M. Johnson, J. K. Markunas, R. N. Jacobs, Kelly A. Jones, J. Arias, Jeffrey M. Peterson, L. A. Almeida, M. Reddy, P. J. Smith, L. O. Bubulac, Andrew J. Stoltz, M. Jaime-Vasquez, J. D. Benson

Publikováno v: Journal of Electronic Materials. 46:5418-5423

The highest sensitivity, lowest dark current infrared focal plane arrays (IRFPAs) are produced using HgCdTe on CdZnTe substrates. As-received state-of-the-art CdZnTe 6 × 6 and 7 × 7.5 cm substrates were analyzed using Nomarski phase contrast micros

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a443d1231c40772043845f9aa9e98291
https://doi.org/10.1007/s11664-017-5599-1

Zobrazit plný text záznamu

Correlation of Etch Pits and Dislocations in As-grown and Thermal Cycle-Annealed HgCdTe(211) Films

Autor: M. Vaghayenegar, David J. Smith, J. D. Benson, R. N. Jacobs, L. A. Almeida, Andrew J. Stoltz

Publikováno v: Journal of Electronic Materials. 46:5007-5019

This paper reports observations of the different types of etch pits and dislocations present in thick HgCdTe (211) layers grown by molecular beam epitaxy on CdTe/Si (211) composite substrates. Dislocation analysis for as-grown and thermal cycle-annea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c959b3723949a6d197010fcb9b9776cc
https://doi.org/10.1007/s11664-017-5494-9

Zobrazit plný text záznamu

Analysis of Etched CdZnTe Substrates

Autor: R. N. Jacobs, Priyalal Wijewarnasuriya, C. M. Lennon, J. K. Markunas, Andrew J. Stoltz, L. O. Bubulac, J. M. Arias, Jeffrey M. Peterson, Kelly A. Jones, D. D. Lofgreen, M. Reddy, M. Jaime-Vasquez, J. D. Benson, P. J. Smith, L. A. Almeida, Scott M. Johnson

Publikováno v: Journal of Electronic Materials. 45:4502-4510

State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surfac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc7e46ece6a38db92ecf0ef126754fff
https://doi.org/10.1007/s11664-016-4642-y

Zobrazit plný text záznamu

As-Received CdZnTe Substrate Contamination

Publikováno v: Journal of Electronic Materials. 44:3082-3091

State-of-the-art as-received (112)B CdZnTe substrates were examined for surface impurity contamination, polishing damage, and tellurium precipitates/inclusions. A maximum surface impurity concentration of Al = 7.5 × 1014, Si = 3.7 × 1013, Cl = 3.12

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c09a524a53c87e7ba0615ea144cfddc2
https://doi.org/10.1007/s11664-015-3823-4

Zobrazit plný text záznamu

Impact of Tellurium Precipitates in CdZnTe Substrates on MBE HgCdTe Deposition

Publikováno v: Journal of Electronic Materials. 43:3993-3998

State-of-the-art (112)B CdZnTe substrates were examined for near-surface tellurium precipitate-related defects. The Te precipitate density was observed to be fairly uniform throughout the bulk of the wafer, including the near-surface region. After a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d349120cfa718153929edce21a396dba
https://doi.org/10.1007/s11664-014-3338-4

Zobrazit plný text záznamu

A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds

Autor: K. Brogden, C. M. Lennon, P. J. Smith, N. Supola, R. N. Jacobs, Patrick Maloney, Andrew J. Stoltz, M. Jaime-Vasquez, Alexander Brown, J. D. Benson, L. A. Almeida, J. K. Markunas

Publikováno v: Journal of Electronic Materials. 43:3708-3717

HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surf

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8cdfe5a90d5e586bff40498051299d4b
https://doi.org/10.1007/s11664-014-3281-4

Zobrazit plný text záznamu

Impurity Gettering in (112)B HgCdTe/CdTe/Alternate Substrates

Publikováno v: Journal of Electronic Materials. 42:3217-3223

The crystalline structure and impurity profiles of HgCdTe/CdTe/alternate substrate (AS; Si and GaAs are possibilities) and CdTe/AS were analyzed by secondary-ion mass spectrometry, atomic force microscopy, etch pit density analysis, and scanning tran

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3bfcbdf69d26f39a6484ac5f91c66f4f
https://doi.org/10.1007/s11664-013-2780-z

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání