Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Andrew J. Stoltz"'
Autor:
Scott M. Johnson, R. N. Jacobs, Jeffrey M. Peterson, L. O. Bubulac, J. M. Arias, D. D. Lofgreen, J. W. Bangs, Andrew J. Stoltz, L. A. Almeida, M. Reddy, J. D. Benson, A. Wang
Publikováno v:
Journal of Electronic Materials. 48:6194-6202
The formation of impurity ‘hot spot’ macro-defects—localized high impurity level contaminates—is examined. The evolution of macro-defects through their critical stages: as-received CdZnTe substrate, molecular beam epitaxy (MBE) prep etch, Te/
Autor:
L. A. Almeida, B. Pinkie, B. Wissman, Alexander Brown, R. N. Jacobs, Andrew J. Stoltz, J. D. Benson, J. Arias
Publikováno v:
Journal of Electronic Materials. 48:6138-6144
We demonstrate the benefits of in situ band-edge monitoring of CdZnTe substrates for molecular beam epitaxy (MBE). The production of large-area Cd1−yZnyTe(211)B substrates up to and exceeding 8 × 8 cm2 brings new challenges from the perspective of
Autor:
Andrew J. Stoltz, A. Yulius, L. A. Almeida, L. O. Bubulac, Jeffrey M. Peterson, Scott M. Johnson, M. Carmody, M. Jaime-Vasquez, P. J. Smith, A. Wang, J. D. Benson, M. Reddy, R. N. Jacobs, D. D. Lofgreen, J. M. Arias, J. W. Bangs, Priyalal Wijewarnasuriya
Publikováno v:
Journal of Electronic Materials. 47:5671-5679
In this work, impurity ‘hot spot’ macro-defects—high impurity level macro-defect contaminates were examined. ‘Hot spots’ have very high localized concentrations of: K, Mg, Ni, Cr, Mn, Ca, Al, Na, Fe, and Cu. For example, these ‘hot spot
Autor:
D. D. Lofgreen, Priyalal Wijewarnasuriya, Scott M. Johnson, J. K. Markunas, R. N. Jacobs, Kelly A. Jones, J. Arias, Jeffrey M. Peterson, L. A. Almeida, M. Reddy, P. J. Smith, L. O. Bubulac, Andrew J. Stoltz, M. Jaime-Vasquez, J. D. Benson
Publikováno v:
Journal of Electronic Materials. 46:5418-5423
The highest sensitivity, lowest dark current infrared focal plane arrays (IRFPAs) are produced using HgCdTe on CdZnTe substrates. As-received state-of-the-art CdZnTe 6 × 6 and 7 × 7.5 cm substrates were analyzed using Nomarski phase contrast micros
Publikováno v:
Journal of Electronic Materials. 46:5007-5019
This paper reports observations of the different types of etch pits and dislocations present in thick HgCdTe (211) layers grown by molecular beam epitaxy on CdTe/Si (211) composite substrates. Dislocation analysis for as-grown and thermal cycle-annea
Autor:
R. N. Jacobs, Priyalal Wijewarnasuriya, C. M. Lennon, J. K. Markunas, Andrew J. Stoltz, L. O. Bubulac, J. M. Arias, Jeffrey M. Peterson, Kelly A. Jones, D. D. Lofgreen, M. Reddy, M. Jaime-Vasquez, J. D. Benson, P. J. Smith, L. A. Almeida, Scott M. Johnson
Publikováno v:
Journal of Electronic Materials. 45:4502-4510
State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surfac
Autor:
A. Yulius, C. M. Lennon, L. A. Almeida, Priyalal Wijewarnasuriya, R. N. Jacobs, Jeffrey M. Peterson, M. Jaime-Vasquez, R. Hirsch, Andrew J. Stoltz, S. Motakef, M. Reddy, J. D. Benson, M. F. Vilela, P. J. Smith, M. Carmody, J. K. Markunas, L. O. Bubulac, J. M. Arias, D. D. Lofgreen, J. Fiala, Scott M. Johnson
Publikováno v:
Journal of Electronic Materials. 44:3082-3091
State-of-the-art as-received (112)B CdZnTe substrates were examined for surface impurity contamination, polishing damage, and tellurium precipitates/inclusions. A maximum surface impurity concentration of Al = 7.5 × 1014, Si = 3.7 × 1013, Cl = 3.12
Autor:
Priyalal Wijewarnasuriya, Jeffrey M. Peterson, D. D. Lofgreen, L. A. Almeida, Daeyeon Lee, G. Bostrup, R. N. Jacobs, Y. Chen, Andrew J. Stoltz, Scott M. Johnson, L. O. Bubulac, M. Jaime-Vasquez, M. Carmody, M. Reddy, J. D. Benson, A. Yulius, G. Brill, M. F. Vilela, J. K. Markunas, S. Couture, P. J. Smith
Publikováno v:
Journal of Electronic Materials. 43:3993-3998
State-of-the-art (112)B CdZnTe substrates were examined for near-surface tellurium precipitate-related defects. The Te precipitate density was observed to be fairly uniform throughout the bulk of the wafer, including the near-surface region. After a
Autor:
K. Brogden, C. M. Lennon, P. J. Smith, N. Supola, R. N. Jacobs, Patrick Maloney, Andrew J. Stoltz, M. Jaime-Vasquez, Alexander Brown, J. D. Benson, L. A. Almeida, J. K. Markunas
Publikováno v:
Journal of Electronic Materials. 43:3708-3717
HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surf
Autor:
M. F. Vilela, David R. Rhiger, Jeffrey M. Peterson, L. O. Bubulac, Y. Chen, J. A. Arias, M. Jaime-Vasquez, P. J. Smith, C. M. Lennon, J. W. Bangs, R. N. Jacobs, J. D. Benson, E. A. Patten, Scott M. Johnson, J. K. Markunas, G. Brill, Priyalal Wijewarnasuriya, L. A. Almeida, D. D. Lofgreen, Andrew J. Stoltz
Publikováno v:
Journal of Electronic Materials. 42:3217-3223
The crystalline structure and impurity profiles of HgCdTe/CdTe/alternate substrate (AS; Si and GaAs are possibilities) and CdTe/AS were analyzed by secondary-ion mass spectrometry, atomic force microscopy, etch pit density analysis, and scanning tran