Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Andrew J. Ritenour"'
Autor:
Shaul Aloni, Allison L. Davis, Jason W. Boucher, Shannon W. Boettcher, Andrew J. Ritenour, Ann L. Greenaway
Publikováno v:
Journal of Materials Chemistry A. 4:2909-2918
We report the heteroepitaxial growth of variable composition n-GaAs1−xPx directly on GaAs substrates via close-spaced vapor transport using mixed GaAs–GaP powder sources. GaAs1−xPx films showed an average 10% reduction in atomic concentration o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf1c3b79938819839f7353a86c5767f6
https://doi.org/10.1039/c5ta06900a
https://doi.org/10.1039/c5ta06900a
Autor:
Jason W. Boucher, Andrew J. Ritenour, Robert DeLancey, Shannon W. Boettcher, Shaul Aloni, Ann L. Greenaway
Publikováno v:
Energy & Environmental Science. 8:278-285
We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors. The free carrier type and density (1016 to 1019 cm−3) of the films we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b42294d8fc1dcc08a509a506f84e689
https://doi.org/10.1039/c4ee01943a
https://doi.org/10.1039/c4ee01943a
Autor:
Benjamin F. Bachman, Shaul Aloni, Allison L. Davis, Jason W. Boucher, Shannon W. Boettcher, Ann L. Greenaway, Andrew J. Ritenour
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
Close-spaced vapor transport (CSVT) uses solid precursors to deposit material at high rates and with high precursor utilization. The use of solid precursors could significantly reduce the costs associated with III–V photovoltaics, particularly if g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17fde687463818c7b2c0b537dcbb1aab
https://doi.org/10.1109/pvsc.2015.7356079
https://doi.org/10.1109/pvsc.2015.7356079
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
We report on the first pn junction solar cells grown by homoepitaxy of GaAs using close space vapor transport (CSVT). Cells were grown both on commercial wafer substrates and on a CSVT absorber film, and had efficiencies reaching 8.1%, open circuit v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e83728dcf7e599b79f643c9847528103
https://doi.org/10.1109/pvsc.2014.6924959
https://doi.org/10.1109/pvsc.2014.6924959
Publikováno v:
ACS nano. 7(8)
Methods to simultaneously optimize carrier collection and light in-coupling in semiconductors are important for developing low-cost, high-efficiency photovoltaics and photoelectrodes. We anodically etched nanostructures into planar (100) n-GaAs wafer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e41fe0da485eeb387444e1c77bf3ced
https://pubmed.ncbi.nlm.nih.gov/23869623
https://pubmed.ncbi.nlm.nih.gov/23869623
Publikováno v:
SPIE Proceedings.
GaAs is an attractive material for thin-film photovoltaic applications, but is not widely used for terrestrial power generation due to the high cost of metal-organic chemical vapor deposition (MOCVD) techniques typically used for growth. Close space
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d28486acaa90db7bf76f263a60005934
https://doi.org/10.1117/12.2015276
https://doi.org/10.1117/12.2015276
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
GaAs is an attractive photovoltaic material, but its widespread implementation is limited in part by the high cost of metal-organic chemical vapor deposition, which employs toxic and pyrophoric gas-phase precursors. We study close-space vapor transpo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c61c6ba2f6e1cd93069bc1bd773d3cc
https://doi.org/10.1109/pvsc.2012.6317751
https://doi.org/10.1109/pvsc.2012.6317751
Publikováno v:
ACS applied materialsinterfaces. 4(1)
n-GaAs films were grown epitaxially on n(+)-GaAs substrates by a close-spaced vapor transport method and their photoelectrochemical energy conversion properties studied. Under 100 mW cm(-2) of ELH solar simulation, conversion efficiencies up to 9.3%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a38802d8b3c3886a8f1838a5db9f1f87
https://pubmed.ncbi.nlm.nih.gov/22136204
https://pubmed.ncbi.nlm.nih.gov/22136204