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EUVL is considered to be one of the most attractive candidates to succeed conventional optical lithography in the coming years. This will permit reduction of structure sizes in semiconductor devices to less than 45 nm. To enable this technology, a li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b02a8d7e46c9a14b994bd959dab95f3
https://doi.org/10.1117/3.613774.ch20
https://doi.org/10.1117/3.613774.ch20
