Zobrazeno 1 - 10
of 195
pro vyhledávání: '"Andrew J Flewitt"'
Autor:
Dilveen W. Mohammed, Rayan M. Ameen, Rob Waddingham, Andrew J. Flewitt, James Bowen, Stephen N. Kukureka
Publikováno v:
Micromachines, Vol 15, Iss 7, p 853 (2024)
This study examines the electromechanical characteristics of aluminium-doped zinc oxide (AZO) films. The films were produced using the RF magnetron sputtering process with a consistent thickness of 150 nm on various polymer substrates. The study focu
Externí odkaz:
https://doaj.org/article/33c6d828db1a443cb615adcced25eaf3
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 17, Pp n/a-n/a (2023)
Abstract High quality thin film p‐n junction diodes with high rectification ratios and low ideality factors have been fabricated from metal oxides, such as amorphous oxide semiconductors (AOSs), and characterized. Plasma treatment of interfaces has
Externí odkaz:
https://doaj.org/article/4a24cf584d5142d49b8a4c739ad22086
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
Abstract We report on the appearance of a strong persistent photoconductivity (PPC) and conductor-like behaviour in zinc tin oxide (ZTO) thinfilm phototransistors. The active ZTO channel layer was prepared by remote plasma reactive sputtering and pos
Externí odkaz:
https://doaj.org/article/e13187abd71a463dad0e4e576bcde901
Autor:
Mari Napari, Tahmida N. Huq, Tuhin Maity, Daisy Gomersall, Kham M. Niang, Armin Barthel, Juliet E. Thompson, Sami Kinnunen, Kai Arstila, Timo Sajavaara, Robert L. Z. Hoye, Andrew J. Flewitt, Judith L. MacManus‐Driscoll
Publikováno v:
InfoMat, Vol 2, Iss 4, Pp 769-774 (2020)
Externí odkaz:
https://doaj.org/article/bb51c99d6af44dbc8cb65045657ea420
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract State-of-the-art pixels for high-resolution microdisplays utilize reflective surfaces on top of electrical backplanes. Each pixel is a single fixed color and will usually only modulate the amplitude of light. With the rise of nanophotonics,
Externí odkaz:
https://doaj.org/article/e46e009000c643998fdfae739db9c870
Autor:
Sanggil Han, Andrew J. Flewitt
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract A quantitative and analytical investigation on the conduction mechanism in p-type cuprous oxide (Cu2O) thin films is performed based on analysis of the relative dominance of trap-limited and grain-boundary-limited conduction. It is found tha
Externí odkaz:
https://doaj.org/article/064a34c83afb43f99bb7d088bb4b1b88
Autor:
Salman Alfarisyi, Patryk Golec, Eva Bestelink, Kham M. Niang, Andrew J. Flewitt, S. Ravi P. Silva, Radu A. Sporea
Despite rapidly expanding interest in thin-film source-gated transistors (SGTs), the high temperature dependence of drain current (TDDC) in devices comprising Schottky source barriers is delaying wide adoption. To reduce this effect, alternative sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d001a63667be5fee28d9b69bc048cb24
Autor:
Haoze Kuang, Shuyi Huang, Chi Zhang, Jinkai Chen, Lin Shi, Xiangyu Zeng, Yubo Li, Zongyin Yang, Xiaozhi Wang, Shurong Dong, Jianyi Yang, Andrew J. Flewitt, Jikui Luo
Publikováno v:
ACS Applied Materials & Interfaces. 14:794-804
Energy harvesting and energy transmission are the key technologies for self-powered systems; thus, the combination of these two is urgently needed. An innovative electric field resonance (EFR)-based wireless triboelectric nanogenerator (TENG) is prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ab7013cce45d10a6f9c8b6ae84ab3b3
https://doi.org/10.1021/acsami.1c19075
https://doi.org/10.1021/acsami.1c19075
Autor:
Radu A. Sporea, Georgios Bairaktaris, Luca Maiolo, Francesco Maita, S. Ravi P. Silva, Kalil Ali, Kham M. Niang, Andrew J. Flewitt, Eva Bestelink
Publikováno v:
IEEE Sensors Journal. 20:14903-14913
Silicon-based digital electronics have evolved over decades through an aggressive scaling process following Moore’s law with increasingly complex device structures. Simultaneously, large-area electronics have continued to rely on the same field-eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0b562700e5e6852ea5e34d8ef680eb1
https://doi.org/10.1109/jsen.2020.3012413
https://doi.org/10.1109/jsen.2020.3012413
Autor:
Tuhin Maity, Daisy Gomersall, Judith L. MacManus-Driscoll, Kai Arstila, Andrew J. Flewitt, Robert L. Z. Hoye, Sami Kinnunen, Mari Napari, Timo Sajavaara, Tahmida N. Huq, Kham M. Niang, Armin Barthel, Juliet E. Thompson
Publikováno v:
InfoMat
InfoMat, Vol 2, Iss 4, Pp 769-774 (2020)
InfoMat, Vol 2, Iss 4, Pp 769-774 (2020)
Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferrom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9032b94597b3a2500147e6cd6f6d68c
https://doi.org/10.1002/inf2.12076
https://doi.org/10.1002/inf2.12076